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2SK2229 Datasheet(PDF) 2 Page - Toshiba Semiconductor

Part No. 2SK2229
Description  Silicon N Channel MOS Type Chopper Regulator, DC−DC Converter and Motor Drive Applications
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Maker  TOSHIBA [Toshiba Semiconductor]
Homepage  http://www.semicon.toshiba.co.jp/eng
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2SK2229 Datasheet(HTML) 2 Page - Toshiba Semiconductor

   
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2SK2229
2004-07-06
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±16 V, VDS = 0 V
±10
µA
Drain cut−off current
IDSS
VDS = 60 V, VGS = 0 V
100
µA
Drain−source breakdown
voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
60
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
0.8
2.0
V
VGS = 4 V, ID = 1.3 A
0.20
0.30
Drain−source ON resistance
RDS (ON)
VGS = 10 V, ID = 2.5 A
0.12
0.16
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 2.5 A
3.0
5.0
S
Input capacitance
Ciss
370
Reverse transfer capacitance
Crss
60
Output capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
180
pF
Rise time
tr
18
Turn−on time
ton
25
Fall time
tf
55
Switching time
Turn−off time
toff
170
ns
Total gate charge (Gate−source
plus gate−drain)
Qg
12
Gate−source charge
Qgs
8
Gate−drain (“miller”) charge
Qgd
VDD ≈ 48 V, VGS = 10 V, ID = 5 A
4
nC
Source−Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
IDR
5
A
Pulse drain reverse current
(Note 1)
IDRP
20
A
Forward voltage (diode)
VDSF
IDR = 5 A, VGS = 0 V
−1.7
V
Reverse recovery time
trr
70
ns
Reverse recovered charge
Qrr
IDR = 5 A, VGS = 0 V, dIDR/dt = 50 A/µs
0.1
µC
Marking
K2229
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Part No. (or abbreviation code)


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