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2SK2173 Datasheet(PDF) 2 Page - Toshiba Semiconductor

Part No. 2SK2173
Description  Silicon N Channel MOS Type Chopper Regulator, DC−DC Converter and Motor Drive Applications
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Maker  TOSHIBA [Toshiba Semiconductor]
Homepage  http://www.semicon.toshiba.co.jp/eng
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2SK2173 Datasheet(HTML) 2 Page - Toshiba Semiconductor

   
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2SK2173
2002- 07- 22
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±16 V, VDS = 0 V
±10
µA
Drain cut–off current
IDSS
VDS = 60 V, VGS = 0 V
100
µA
Drain–source breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
60
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
0.8
2.0
V
VGS = 4 V, ID = 25 A
19
25
Drain−source ON resistance
RDS (ON)
VGS = 10 V, ID = 25 A
13
17
mΩ
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 25 A
28
40
S
Input capacitance
Ciss
3550
Reverse transfer capacitance
Crss
550
Output capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
1600
pF
Rise time
tr
25
Turn−on time
ton
55
Fall time
tf
60
Switching time
Turn−off time
toff
180
ns
Total gate charge (Gate−source
plus gate−drain)
Qg
110
Gate−source charge
Qgs
70
Gate−drain (“miller”) charge
Qgd
VDD ≈ 48 V, VGS = 10 V, ID = 50 A
40
nC
Source−Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
IDR
50
A
Pulse drain reverse current
(Note 1)
IDRP
200
A
Forward voltage (diode)
VDSF
IDR = 50 A, VGS = 0 V
−1.7
V
Reverse recovery time
trr
120
ns
Reverse recovered charge
Qrr
IDR = 50 A, VGS = 0 V
dIDR / dt = 50 A / µs
0.2
µC
Marking
Type
K2173
※ Lot Number
Month (starting from alphabet A)
Year
(last number of the christian era)


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