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2SK2173 Datasheet(PDF) 1 Page - Toshiba Semiconductor

Part No. 2SK2173
Description  Silicon N Channel MOS Type Chopper Regulator, DC−DC Converter and Motor Drive Applications
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Maker  TOSHIBA [Toshiba Semiconductor]
Homepage  http://www.semicon.toshiba.co.jp/eng
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2SK2173 Datasheet(HTML) 1 Page - Toshiba Semiconductor

   
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2SK2173
2002- 07- 22
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L
2
−π−MOSV)
2SK2173
Chopper Regulator, DC−DC Converter and Motor Drive
Applications
4 V gate drive
Low drain−source ON resistance
: RDS (ON) = 13 mΩ (typ.)
High forward transfer admittance
: |Yfs| = 40 S (typ.)
Low leakage current
: IDSS = 100 µA (max) (VDS = 60 V)
Enhancement−mode
: Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain−source voltage
VDSS
60
V
Drain−gate voltage (RGS = 20 kΩ)
VDGR
60
V
Gate−source voltage
VGSS
±20
V
DC (Note 1)
ID
50
A
Drain current
Pulse (Note 1)
IDP
200
A
Drain power dissipation (Tc = 25°C)
PD
125
W
Single pulse avalanche energy
(Note 2)
EAS
683
mJ
Avalanche current
IAR
50
A
Repetitive avalanche energy (Note 3)
EAR
12.5
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55~150
°C
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (ch−c)
1.0
°C / W
Thermal resistance, channel to
ambient
Rth (ch−a)
50
°C / W
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: VDD = 25 V, Tch = 25°C (initial), L = 371 µH, RG = 25 Ω, IAR = 50 A
Note 3: Repetitive rating: Pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device.
Please handle with caution.
Unit: mm
1. GATE
2. DRAIN (HEAT SINK)
3. SOURCE
JEDEC
JEITA
TOSHIBA
2-16C1B
Weight: 4.6 g (typ.)


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