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2SK1359 Datasheet(PDF) 2 Page - Toshiba Semiconductor

Part No. 2SK1359
Description  N CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS)
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Maker  TOSHIBA [Toshiba Semiconductor]
Homepage  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SK1359 Datasheet(HTML) 2 Page - Toshiba Semiconductor

  2SK1359 Datasheet HTML 1Page - Toshiba Semiconductor 2SK1359 Datasheet HTML 2Page - Toshiba Semiconductor 2SK1359 Datasheet HTML 3Page - Toshiba Semiconductor 2SK1359 Datasheet HTML 4Page - Toshiba Semiconductor 2SK1359 Datasheet HTML 5Page - Toshiba Semiconductor 2SK1359 Datasheet HTML 6Page - Toshiba Semiconductor  
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2SK1359
2002-09-04
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±25 V, VDS = 0 V
±50
nA
Drain cut−off current
IDSS
VDS = 800 V, VGS = 0 V
300
µA
Drain−source breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
1000
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
1.5
3.5
V
Drain−source ON resistance
RDS (ON)
VGS = 10 V, ID = 2 A
3.0
3.8
Forward transfer admittance
|Yfs|
VDS = 20 V, ID = 2 A
1.0
2.0
S
Input capacitance
Ciss
700
Reverse transfer capacitance
Crss
55
Output capacitance
Coss
VDS = 25 V, VGS = 0V, f = 1 MHz
100
pF
Rise time
tr
18
Turn−on time
ton
30
Fall time
tf
12
Switching time
Turn−off time
toff
70
ns
Total gate charge (Gate−source
plus gate−drain)
Qg
60
Gate−source charge
Qgs
35
Gate−drain (“miller”) charge
Qgd
VDD ≈ 400 V, VGS = 10 V, ID = 4 A
25
nC
Source−Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
IDR
5
A
Pulse drain reverse current
(Note 1)
IDRP
15
A
Forward voltage (diode)
VDSF
IDR = 4 A, VGS = 0 V
−1.9
V
Marking
Type
K1359
※ Lot Number
Month (starting from alphabet A)
Year (last number of the christian era)


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