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2SK1359 Datasheet(PDF) 1 Page - Toshiba Semiconductor

Part No. 2SK1359
Description  N CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS)
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Maker  TOSHIBA [Toshiba Semiconductor]
Homepage  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SK1359 Datasheet(HTML) 1 Page - Toshiba Semiconductor

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2SK1359
2002-09-04
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSII
.5
)
2SK1359
DC−DC Converter and Motor Drive Applications
Low drain−source ON resistance
: RDS (ON) = 3.0 Ω (typ.)
High forward transfer admittance
: |Yfs| = 2.0 S (typ.)
Low leakage current
: IDSS = 300 µA (max) (VDS = 800 V)
Enhancement−mode
: Vth = 1.5~3.5 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain−source voltage
VDSS
1000
V
Drain−gate voltage (RGS = 20 kΩ)
VDGR
1000
V
Gate−source voltage
VGSS
±30
V
DC
(Note 1)
ID
5
Drain current
Pulse (Note 1)
IDP
15
A
Drain power dissipation (Tc = 25°C)
PD
125
W
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55~150
°C
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (ch−c)
1.0
°C / W
Thermal resistance, channel to
ambient
Rth (ch−a)
50
°C / W
Note 1: Please use devices on condition that the channel temperature is below 150°C.
This transistor is an electrostatic sensitive device.
Please handle with caution.
Unit: mm
1. GATE
2. DRAIN (HEAT SINK)
3. SOURCE
JEDEC
JEITA
TOSHIBA
2-16C1B
Weight: 4.6 g (typ.)


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