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RD15HVF1 Datasheet(PDF) 6 Page - Mitsubishi Electric Semiconductor |
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RD15HVF1 Datasheet(HTML) 6 Page - Mitsubishi Electric Semiconductor |
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6 / 9 page  MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD15HVF1 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W RD15HVF1 MITSUBISHI ELECTRIC 7 Mar 2008 OBSERVE HANDLING PRECAUTIONS TEST CIRCUIT(f=520MHz) RD15HVF1 520MHz L2:2Turns,I.D6mm,D1.6mm P=1 silver plateted copper wire L2 C3:2200pF,330uF in parallel C3 C2:2200pF*2 in parallel L1 100 7 56pF Dimensions:mm 56pF RF-IN Vdd Vgg 100OHM L1:4Turns,I.D6mm,D1.6mm P=1 silver plateted copper wire C1 RF-OUT C2 C1:2200pF 10uF in parallel Note:Board material-Teflon substrate micro strip line width=4.2mm/50OHM,er:2.7,t=1.6mm 100 7 90 L3 8.2kOHM 5pF 15pF 10pF 90 12pF L3:4Turns,I.D6mm,D1.6mm P=1 silver plateted copper wire 9.1kOHM 6/9 |
Similar Part No. - RD15HVF1 |
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Similar Description - RD15HVF1 |
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