MITSUBISHI RF POWER MOS FET

ELECTROSTATIC SENSITIVE DEVICE

RD06HHF1

RoHS Compliance,

Silicon MOSFET Power Transistor 30MHz,6W

RD06HHF1

MITSUBISHI ELECTRIC

7 Mar 2008

OBSERVE HANDLING PRECAUTIONS

DESCRIPTION

RD06HHF1 is a MOS FET type transistor specifically

designed for HF RF power amplifiers applications.

FEATURES

High power gain:

Pout>6W, Gp>16dB @Vdd=12.5V,f=30MHz

APPLICATION

For output stage of high power amplifiers in

HF band mobile radio sets.

RoHS COMPLIANT

RD06HHF1-101 is a RoHS compliant products.

RoHS compliance is indicate by the letter “G” after the lot

OUTLINE DRAWING

note:

Torelance of no designation means typical value.

Dimension in mm.

0.5+0.10/-0.15

PINS

1:GATE

2:SOURCE

3:DRAIN

1.3+/-0.4

2.5

9.5MAX

5deg

2.5

3.6+/-0.2

0.8+0.10/-0.15

1.2+/-0.4

2

9.1+/-0.7

1

3

2

marking.

This product include the lead in high melting temperaturetype solders.

How ever,it applicable to the following exceptions of RoHS Directions.

1.Lead in high melting temperature type solders(i.e.tin-lead solder alloys containing more than85% lead.)

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