RA45H8994M1-101 datasheet(6/9 Pages) MITSUBISHI

Part #	RA45H8994M1-101

Description	RF MOSFET MODULE 896-941MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO

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Manufacturer	MITSUBISHI [Mitsubishi Electric Semiconductor]

Direct Link	http://www.mitsubishichips.com

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6 / 9 page

MITSUBISHI RF POWER MODULE

RoHS COMPLIANCE

RA45H8994M1

MITSUBISHI ELECTRIC

29

th Feb 2008

6/9

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

DUT

Z

G=50Ω

5

4

3

2

1

Z

L=50Ω

C3

C4

C2

C1

R1

A

Directional

Coupler

Attenuator

Pow er

Meter

Spectrum

Analyzer

-

+

DC Pow er

Supply V

GG2

+

-

DC Pow er

Supply V

DD

-

+

DC Pow er

Supply V

GG1

Attenuator

Pre-

amplifier

Pow er

Meter

Directional

Coupler

Attenuator

Signal

Generator

TEST BLOCK DIAGRAM

EQUIVALENT CIRCUIT

C3, C4: 4700pF, 22uF in parallel

1 RF Input added Gate Voltage 1(Pin & VGG1)

2 Gate Voltage 2(VGG2)

3 Drain Voltage (VDD)

4 RF Output (Pout)

5 RF Ground (Case)

C1: 4700pF, C2: 1000pF, R1: suitable. Please refer the detail below.

VGG1=3.4V

4

3

1

2

5

External resistance connected to VGG1; impedance between Pin&VGG1 and ground needs to make high impedance

NOTE: Resistance between Gate Voltage 1, where RF is input, and ground equals to 15k ohm.

that doesn't prevent RF characteristic on this module.

VGG1

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RA45H8994M1-101 Datasheet(PDF) 6 Page - Mitsubishi Electric Semiconductor

RA45H8994M1-101 Datasheet(HTML) 6 Page - Mitsubishi Electric Semiconductor

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