CM1000E4C-66R datasheet(7/8 Pages) MITSUBISHI

Part #	CM1000E4C-66R

Description	HVIGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE

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Manufacturer	MITSUBISHI [Mitsubishi Electric Semiconductor]

Direct Link	http://www.mitsubishichips.com

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PRELIMINARY

Notice:

This

is not

a final

specification.

Some

parametric

limits

are subject

to change.

Mar. 2009

7

MITSUBISHI HVIGBT MODULES

CM1000E4C-66R

HIGH POWER SWITCHING USE

INSULATED TYPE

4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

ZR

th( j –c )

( t ) =

Σ

n

i=I

i 1–exp

ti

–

t





Ri [K/kW] :

τ

i [sec] :

1

0.0096

0.0001

2

0.1893

0.0058

3

0.4044

0.0602

4

0.3967

0.3512

103

102

4

23

5

7

4

23

5

7

104

EMITTER CURRENT (A)

FREE-WHEEL DIODE REVERSE RECOVERY

CHARACTERISTICS

(TYPICAL)

103

104

102

101

102

100

10-1

2

3

5

7

2

3

5

7

2

3

5

7

2

3

5

7

2

3

5

7

2

3

5

7

103

102

4

23

5

7

4

23

5

7

104

EMITTER CURRENT (A)

FREE-WHEEL DIODE REVERSE RECOVERY

CHARACTERISTICS

(TYPICAL)

103

104

102

101

102

100

10-1

2

3

5

7

2

3

5

7

2

3

5

7

2

3

5

7

2

3

5

7

2

3

5

7

10-2

10-3 23 5 7

10-1

23 5 7

100

23 5 7

101

23 5 7

TIME (s)

TRANSIENT THERMAL IMPEDANCE

CHARACTERISTICS

1.2

1.0

0.8

0.6

0.4

0

0.2

VCC = 1800V, VGE =

±15V

RG(on) = 2.4

Ω, LS = 150nH

Tj = 125

°C, Inductive load

lrr

trr

VCC = 1800V, VGE =

±15V

RG(on) = 2.4

Ω, LS = 150nH

Tj = 150

°C, Inductive load

lrr

trr

Rth(j–c)Q = 12.0K/kW

Rth(j–c)R = 22.5K/kW

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