May 2009

2

MITSUBISHI HVIGBT MODULES

CM600HG-90H

HIGH POWER SWITCHING USE

INSULATED TYPE

3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

MAXIMUM RATINGS

Symbol

Item

Conditions

Ratings

Unit

Collector-emitter voltage

Gate-emitter voltage

Collector current

Emitter current

(Note 2)

Maximum power dissipation (Note 3)

Isolation voltage

Partial discharge extinction voltage

Junction temperature

Operating temperature

Storage temperature

Maximum short circuit pulse width

°C

°C

°C

Pulse

(Note 1)

DC

Pulse

(Note 1)

°C, IGBT part

RMS, sinusoidal, f = 60Hz, t = 1 min.

≤ 10 pC

4500

± 20

600

1200

600

1200

7500

10200

5100

–40 ~ +150

–40 ~ +125

–40 ~ +125

10

V

V

A

A

A

A

W

V

V

°C

°C

°C

µs

ELECTRICAL CHARACTERISTICS

Symbol

Item

Conditions

°C

°C

—

—

5.0

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

8

6.0

—

108

8

2.4

10

3.45

3.70

—

—

2.80

—

—

1.70

4.80

4.15

—

610

0.67

3.5

35

7.0

0.5

—

—

—

—

—

—

2.40

1.20

—

6.00

1.20

—

—

—

1.80

—

—

Typ

Limits

Max

Min

Unit

Collector cutoff current

Gate-emitter threshold voltage

Gate leakage current

Input capacitance

Output capacitance

Reverse transfer capacitance

Total gate charge

Collector-emitter saturation

voltage

Turn-on delay time

Turn-on rise time

Turn-on switching energy

(Note 5)

Turn-off delay time

Turn-off fall time

Turn-off switching energy

(Note 5)

Emitter-collector voltage

(Note 2)

Reverse recovery time

(Note 2)

Reverse recovery charge

(Note 2)

Reverse recovery energy

(Note 2), (Note 5)

°C

°C

°C

(Note 4)

±15 V

Inductive load

±15 V

Inductive load

(Note 4)

±15 V

Inductive load

mA

V

µA

nF

nF

nF

µC

V

µs

µs

J/P

µs

µs

J/P

V

µs

µC

J/P

°C

°C

°C

°C