CM300DU-24H datasheet(4/4 Pages) MITSUBISHI

Part #	CM300DU-24H

Description	IGBT MODULES HIGH POWER SWITCHING USE

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Manufacturer	MITSUBISHI [Mitsubishi Electric Semiconductor]

Direct Link	http://www.mitsubishichips.com

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4 / 4 page

Feb. 2009

4

MITSUBISHI IGBT MODULES

CM300DU-24H

HIGH POWER SWITCHING USE

INSULATED TYPE

Per unit base = Rth(j – c) = 0.24

°C/W

Per unit base = Rth(j – c) = 0.14

°C/W

101

10–3

10–5

10–4

100

7

5

3

2

10–2

7

5

3

2

10–1

7

5

3

2

7

5

3

2

10–323 5 7

23 5 7

101

10–2

10–1

100

10–3

7

5

3

2

10–2

7

5

3

2

10–1

3

2

23 5 7

Single Pulse

TC = 25

°C

Per unit base = Rth(j – c) = 0.18K/W

101

10–3

10–5

10–4

100

7

5

3

2

10–2

7

5

3

2

10–1

7

5

3

2

7

5

3

2

10–323 5 7

23 5 7

101

10–2

10–1

100

10–3

7

5

3

2

10–2

7

5

3

2

10–1

3

2

23 5 7

Single Pulse

TC = 25

°C

Per unit base = Rth(j – c) = 0.11K/W

0

5

10

15

20

0

400

800

1200

1600

VCC = 400V

VCC = 600V

IC = 300A

101

102

23

5

7

103

23

5

7

101

102

2

3

5

7

103

2

3

5

7

VCC = 600V

VGE =

±15V

RG = 1.0

Ω

Tj = 125

°C

td(off)

td(on)

tf

tr

101

7

5

3

2

100

102

7

5

3

2

101

102

23

5

7

103

23

5

7

101

102

2

3

5

7

103

2

3

5

7

–di /dt = 600A /

µs

Tj = 25

°C

trr

Irr

TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS

(IGBT part)

TIME (s)

HALF-BRIDGE

SWITCHING TIME CHARACTERISTICS

(TYPICAL)

COLLECTOR CURRENT IC (A)

REVERSE RECOVERY CHARACTERISTICS

OF FREE-WHEEL DIODE

(TYPICAL)

EMITTER CURRENT IE (A)

GATE CHARGE CHARACTERISTICS

(TYPICAL)

GATE CHARGE QG (nC)

TIME (s)

TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS

(FWDi part)

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CM300DU-24H Datasheet(PDF) 4 Page - Mitsubishi Electric Semiconductor

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