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CM100TU-24H Datasheet(PDF) 4 Page - Mitsubishi Electric Semiconductor

Part # CM100TU-24H
Description  IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE
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Manufacturer  MITSUBISHI [Mitsubishi Electric Semiconductor]
Direct Link  http://www.mitsubishichips.com
Logo MITSUBISHI - Mitsubishi Electric Semiconductor

CM100TU-24H Datasheet(HTML) 4 Page - Mitsubishi Electric Semiconductor

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Feb. 2009
4
MITSUBISHI IGBT MODULES
CM100TU-24H
HIGH POWER SWITCHING USE
INSULATED TYPE
101
10–3
10–5
10–4
100
7
5
3
2
10–2
7
5
3
2
10–1
7
5
3
2
7
5
3
2
10–323 5 7
23 5 7
23 5 7
23 5 7
101
10–2
10–1
100
10–3
10–3
7
5
3
2
10–2
7
5
3
2
10–1
3
2
23 5 7
23 5 7
Single Pulse
TC = 25
°C
Per unit base = Rth(j – c) = 0.35K/W
101
10–3
10–5
10–4
100
7
5
3
2
10–2
7
5
3
2
10–1
7
5
3
2
7
5
3
2
10–323 5 7
23 5 7
23 5 7
23 5 7
101
10–2
10–1
100
10–3
10–3
7
5
3
2
10–2
7
5
3
2
10–1
3
2
23 5 7
23 5 7
Single Pulse
TC = 25
°C
Per unit base = Rth(j – c) = 0.19K/W
100
101
2
3
5
7
102
2
3
5
7
103
2
3
5
7
101
7
102
23
5
7
23
5
7
VCC = 600V
VGE =
±15V
RG = 3.1
Ω
Tj = 125
°C
td(off)
td(on)
tf
tr
101
7
5
3
2
100
102
7
5
3
2
101
7
102
23
5
7
23
5
7
101
102
2
3
5
7
103
2
3
5
7
–di /dt = 200A /
µs
Tj = 25
°C
trr
Irr
0
5
10
15
20
0
100
200
300
400
500
VCC = 400V
VCC = 600V
IC = 100A
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT part)
TIME (s)
HALF-BRIDGE
SWITCHING TIME CHARACTERISTICS
(TYPICAL)
COLLECTOR CURRENT IC (A)
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE
(TYPICAL)
EMITTER CURRENT IE (A)
GATE CHARGE CHARACTERISTICS
(TYPICAL)
GATE CHARGE QG (nC)
TIME (s)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi part)


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