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PS21961-AT Datasheet(PDF) 10 Page - Mitsubishi Electric Semiconductor |
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PS21961-AT Datasheet(HTML) 10 Page - Mitsubishi Electric Semiconductor |
10 / 10 page MITSUBISHI SEMICONDUCTOR <Dual-In-Line Package Intelligent Power Module> PS21961-T/-AT/-CT/-TW TRANSFER-MOLD TYPE INSULATED TYPE Mar. 2009 10 Fig. 11 SYSTEM CONNECTION EXAMPLE OF DIPIPM APPLICATION CIRCUIT Note 1 : Input drive is High-Active type. There is a 3.3k Ω(min.) pull-down resistor integrated in the IC input circuit. To prevent malfunction, the wiring of each input should be as short as possible. When using RC coupling circuit, make sure the input signal level meet the turn-on and turn-off threshold voltage. 2: Thanks to HVIC inside the module, direct coupling to MCU without any opto-coupler or transformer isolation is possible. 3: FO output is open drain type. It should be pulled up to the positive side of a 5V power supply by a resistor of about 10k Ω. 4: To prevent erroneous protection, the wiring of A, B, C should be as short as possible. 5: The time constant R1C4 of the protection circuit should be selected in the range of 1.5-2 µs. SC interrupting time might vary with the wiring pattern. Tight tolerance, temp-compensated type is recommended for R1, C4. 6: All capacitors should be mounted as close to the terminals of the DIPIPM as possible. (C1: good temperature, frequency character- istic electrolytic type, and C2, C3: good temperature, frequency and DC bias characteristic ceramic type are recommended.) 7: To prevent surge destruction, the wiring between the smoothing capacitor and the P, N1 terminals should be as short as possible. Generally a 0.1-0.22 µF snubber between the P-N1 terminals is recommended. 8: Two VNC terminals (9 & 16 pin) are connected inside DIPIPM, please connect either one to the 15V power supply GND outside and leave another one open. 9: It is recommended to insert a Zener diode (24V/1W) between each pair of control supply terminals to prevent surge destruction. 10 : If control GND is connected to power GND by broad pattern, it may cause malfunction by power GND fluctuation. It is recommended to connect control GND and power GND at only a point. 15V line WOUT VOUT C3 C2 C2 C2 C1 C1 C1 UOUT WP VWB VP VVB 5V line UP COM UOUT VOUT WOUT CIN VNO GND F o WN VN VCC C B A R1 N1 C4 CIN N W V U P VWS VVS VUS VUB VCC Fo WN VN UN UN WP VP UP VNC VNC VN1 VP1 VUFB VVFB VWFB C3 HVIC LVIC Shunt resistor Long wiring here might cause SC level fluctuation and malfunction. C1: Electrolytic capacitor with good temperature characteristics 0.22~2 µF R-category ceramic capacitor for noise filtering C2,C3: Long GND wiring here might generate noise to input and cause IGBT malfunction. Long wiring here might cause short-circuit. Long wiring here might cause short-circuit failure. M M Bootstrap negative electrodes should be connected to U, V, W terminals directly and separated from the main output wires. |
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