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J112 Datasheet(PDF) 3 Page - Motorola, Inc

Part No. J112
Description  JFET Chopper Transistor (N-Channel- Depletion)
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Maker  MOTOROLA [Motorola, Inc]
Homepage  http://www.freescale.com
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J112 Datasheet(HTML) 3 Page - Motorola, Inc

   
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J112
3
Motorola Small–Signal Transistors, FETs and Diodes Device Data
NOTE 2
The Zero–Gate–Voltage Drain Current (IDSS), is the principle
determinant of other J-FET characteristics. Figure 10 shows
the relationship of Gate–Source Off Voltage (VGS(off) and
Drain–Source On Resistance (rds(on)) to IDSS. Most of the
devices will be within
±10% of the values shown in Figure 10.
This data will be useful in predicting the characteristic
variations for a given part number.
For example:
Unknown
rds(on) and VGS range for an J112
The electrical characteristics table indicates that an J112
has an IDSS range of 25 to 75 mA. Figure 10, shows rds(on) =
52 Ohms for IDSS = 25 mA and 30 Ohms for IDSS = 75 mA.
The corresponding VGS values are 2.2 volts and 4.8 volts.
2.0
3.0
5.0
7.0
10
20
0.5 0.7
1.0
2.0
3.0
5.0 7.0 10
20
30
50
ID, DRAIN CURRENT (mA)
Figure 6. Typical Forward Transfer Admittance
1.0
1.5
2.0
3.0
5.0
7.0
10
15
0.03 0.05
0.1
0.3 0.5
1.0
3.0 5.0
10
30
VR, REVERSE VOLTAGE (VOLTS)
Figure 7. Typical Capacitance
200
160
120
80
40
0
0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
VGS, GATE–SOURCE VOLTAGE (VOLTS)
Figure 8. Effect of Gate–Source Voltage
On Drain–Source Resistance
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
– 70
– 40
– 10
20
50
80
110
140
170
Tchannel, CHANNEL TEMPERATURE (°C)
Figure 9. Effect of Temperature On
Drain–Source On–State Resistance
Tchannel = 25°C
VDS = 15 V
Cgs
Cgd
Tchannel = 25°C
(Cds IS NEGLIGIBLE)
IDSS
= 10
mA
25
mA
50 mA
75 mA 100 mA
125 mA
Tchannel = 25°C
ID = 1.0 mA
VGS = 0
10
IDSS, ZERO–GATE–VOLTAGE DRAIN CURRENT (mA)
Figure 10. Effect of IDSS On Drain–Source
Resistance and Gate–Source Voltage
20 30
40 50 60
70 80 90 100 110 120 130 140 150
10
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0
100
90
80
70
60
50
40
30
20
10
0
Tchannel = 25°C
rDS(on) @ VGS = 0
VGS(off)


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