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J112 Datasheet(PDF) 1 Page - Motorola, Inc

Part No. J112
Description  JFET Chopper Transistor (N-Channel- Depletion)
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Maker  MOTOROLA [Motorola, Inc]
Homepage  http://www.freescale.com
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J112 Datasheet(HTML) 1 Page - Motorola, Inc

   
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Motorola Small–Signal Transistors, FETs and Diodes Device Data
JFET Chopper Transistor
N–Channel — Depletion
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain – Gate Voltage
VDG
–35
Vdc
Gate – Source Voltage
VGS
–35
Vdc
Gate Current
IG
50
mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25
°C
PD
350
2.8
mW
mW/
°C
Lead Temperature
TL
300
°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 65 to +150
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Gate – Source Breakdown Voltage
(IG = –1.0 µAdc)
V(BR)GSS
35
Vdc
Gate Reverse Current
(VGS = –15 Vdc)
IGSS
– 1.0
nAdc
Gate Source Cutoff Voltage
(VDS = 5.0 Vdc, ID = 1.0 µAdc)
VGS(off)
– 1.0
– 5.0
Vdc
Drain–Cutoff Current
(VDS = 5.0 Vdc, VGS = –10 Vdc)
ID(off)
1.0
nAdc
ON CHARACTERISTICS
Zero–Gate–Voltage Drain Current(1)
(VDS = 15 Vdc)
IDSS
5.0
mAdc
Static Drain–Source On Resistance
(VDS = 0.1 Vdc)
rDS(on)
50
Drain Gate and Source Gate On–Capacitance
(VDS = VGS = 0, f = 1.0 MHz)
Cdg(on)
+
Csg(on)
28
pF
Drain Gate Off–Capacitance
(VGS = –10 Vdc, f = 1.0 MHz)
Cdg(off)
5.0
pF
Source Gate Off–Capacitance
(VGS = –10 Vdc, f = 1.0 MHz)
Csg(off)
5.0
pF
1. Pulse Width = 300
µs, Duty Cycle = 3.0%.
Order this document
by J112/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
J112
CASE 29–04, STYLE 5
TO–92 (TO–226AA)
1
2
3
© Motorola, Inc. 1997
1 DRAIN
2 SOURCE
3
GATE
(Replaces J111/D)


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