RA60H1317M1A-101 datasheet(2/9 Pages) MITSUBISHI

Part #	RA60H1317M1A-101

Description	RF MOSFET MODULE 136-174MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO

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Manufacturer	MITSUBISHI [Mitsubishi Electric Semiconductor]

Direct Link	http://www.mitsubishichips.com

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MITSUBISHI RF POWER MODULE

RoHS COMPLIANCE

RA60H1317M1A

MITSUBISHI ELECTRIC

13 Mar 2008

2/9

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

MAXIMUM RATINGS (Tcase=+25°C, unless otherwise specified)

SYMBOL PARAMETER

CONDITIONS

RATING

UNIT

VDD

Drain Voltage

VGG<5V

17

V

VGG

Gate Voltage

VDD<12.5V, Pin=0mW

5.5

V

Input Power

100

mW

Pout

Output Power

f=136-174MHz,

ZG=ZL=50Ω

80

W

Tcase(OP)

Operation Case Temperature Range

-30 to +100

°C

Tstg

Storage Temperature Range

-40 to +110

°C

The above parameters are independently guaranteed.

ELECTRICAL CHARACTERISTICS (Tcase=+25°C, ZG=ZL=50Ω, unless otherwise specified)

SYMBOL PARAMETER

CONDITIONS

MIN

TYP

MAX

UNIT

f

Frequency Range

136

174

MHz

Pout

Output Power

60

W

η

T

Total Efficiency

45

%

2fo

2

nd Harmonic

-50

dBc

3fo

3

rd Harmonic

-50

dBc

ρ

in

Input VSWR

3:1

—

IGG

Gate Current

VDD=12.5V

VGG=5V

Pin=50mW

1

mA

—

Stability

VDD=10.0-15.2V, Pin=25-70mW,

Pout<70W (VGG control), Load VSWR=3:1

No parasitic oscillation

More than –60dBc

—

Load VSWR Tolerance

VDD=15.2V, Pin=50mW, Pout=60W (VGG control),

Load VSWR=20:1

No degradation or destroy

—

All parameters, conditions, ratings, and limits are subject to change without notice.

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RA60H1317M1A-101 Datasheet(PDF) 2 Page - Mitsubishi Electric Semiconductor

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