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BM-41EG57MD Datasheet(PDF) 2 Page - BRIGHT LED ELECTRONICS CORP

Part No. BM-41EG57MD
Description  hi-eff red chips and green chips, the hi-eff red chips are made from GaAsP on GaP substrate, the green chips are made from GaP on GaP substrate.
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Maker  BRIGHT [BRIGHT LED ELECTRONICS CORP]
Homepage  http://www.brightled.co.kr
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BM-41EG57MD Datasheet(HTML) 2 Page - BRIGHT LED ELECTRONICS CORP

   
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B
BR
RIIG
GH
HT
T L
LE
ED
D E
EL
LE
EC
CT
TR
RO
ON
NIIC
CS
S C
CO
OR
RP
P..
B
BM
M--4
41
1E
EG
G5
57
7M
MD
D
Ver.1.0 Page 2 of 3
SINCE 1981
Absolute Maximum Ratings(Ta=25℃)
Parameter
Symbol
Hi-Eff Red
Rating
Green
Rating
Unit
Power Dissipation Per Dot
Pd
160
160
mW
Forward Current Per Dot
IF
30
30
mA
Peak Forward Current Per Dot
IFP
(Duty 1/10, 1KHZ)
150
150
mA
Reverse Voltage Per Dot
VR
5
V
Operating Temperature
Topr
-40℃~80℃
-
Storage Temperature
Tstg
-40℃~85℃
-
Soldering Temperature
(1/16" From Body)
Tsol
260℃ For 5 Seconds
-
Electrical And Optical Characteristics(Ta=25℃)
Hi-Eff Red
Parameter
Symbol Condition
Min.
Typ.
Max.
Unit
Forward Voltage Per Dot
VF
IF=10mA
-
3.8
5.0
V
Luminous Intensity Per Dot
Iv
IF=10mA
-
15.0
-
mcd
Reverse Current Per Dot
IR
VR=5V
-
-
100
µA
Peak Wave Length
λ
p
IF=10mA
-
640
-
nm
Dominant Wave Length
λ
d
IF=10mA
626
-
636
nm
Spectral Line Half-width
∆λ
IF=10mA
-
40
-
nm
Green
Parameter
Symbol Condition
Min.
Typ.
Max.
Unit
Forward Voltage Per Dot
VF
IF=10mA
-
4.2
5.0
V
Luminous Intensity Per Dot
Iv
IF=10mA
-
15.0
-
mcd
Reverse Current Per Dot
IR
VR=5V
-
-
100
µA
Peak Wave Length
λ
p
IF=10mA
-
568
-
nm
Dominant Wave Length
λ
d
IF=10mA
569
-
574
nm
Spectral Line Half-width
∆λ
IF=10mA
-
30
-
nm
佰鴻工業股份有限公司
http://www.brtled.com


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