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Electronic Components Datasheet Search |
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CM100DY-24NF Datasheet(PDF) 4 Page - Mitsubishi Electric Semiconductor |
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CM100DY-24NF Datasheet(HTML) 4 Page - Mitsubishi Electric Semiconductor |
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Feb. 2009 4 MITSUBISHI IGBT MODULES CM100DY-24NF HIGH POWER SWITCHING USE 101 102 23 5 7 103 23 5 7 101 102 2 3 5 7 103 2 3 5 7 trr Irr REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) EMITTER CURRENT IE (A) Conditions: VCC = 600V VGE = ±15V RG = 3.1 Ω Tj = 25 °C Inductive load 10–3 10–5 10–4 100 7 5 3 2 10–2 7 5 3 2 10–1 7 5 3 2 10–323 5 7 23 5 7 23 5 7 23 5 7 101 10–2 10–1 100 10–3 10–3 7 5 3 2 10–2 7 5 3 2 10–1 23 5 7 23 5 7 Single Pulse TC = 25 °C TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part & FWDi part) TIME (s) IGBT part: Per unit base = Rth(j–c) = 0.19 K/W FWDi part: Per unit base = Rth(j–c) = 0.35 K/W 0 4 8 16 12 20 0 400 200 800 1000 600 GATE CHARGE CHARACTERISTICS (TYPICAL) GATE CHARGE QG (nC) VCC = 600V VCC = 400V IC = 100A |
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