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CM100DY-24NF Datasheet(PDF) 3 Page - Mitsubishi Electric Semiconductor |
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CM100DY-24NF Datasheet(HTML) 3 Page - Mitsubishi Electric Semiconductor |
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Feb. 2009 3 MITSUBISHI IGBT MODULES CM100DY-24NF HIGH POWER SWITCHING USE PERFORMANCE CURVES 200 160 40 120 80 0 04 6 8 10 OUTPUT CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER VOLTAGE VCE (V) Tj = 25 °C 12 11 10 9 VGE = 20V 2 15 13 4 3 2 1 0 0 200 150 100 COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT IC (A) VGE = 15V Tj = 25 °C Tj = 125 °C 50 10 8 6 4 2 0 20 12 14 68 10 16 18 GATE-EMITTER VOLTAGE VGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) Tj = 25 °C IC = 200A IC = 40A IC = 100A 101 2 3 5 7 102 2 3 5 7 103 012 4 35 FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) EMITTER-COLLECTOR VOLTAGE VEC (V) Tj = 25 °C Tj = 125 °C 10–1 100 10–1 2 3 5 7 101 2 3 5 7 102 2 3 5 7 2 100 35 7 2 101 35 7 2 102 35 7 CAPACITANCE–VCE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER VOLTAGE VCE (V) Cies Coes Cres VGE = 0V 100 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 101 102 57 103 23 5 7 23 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT IC (A) Conditions: VCC = 600V VGE = ±15V RG = 3.1 Ω Tj = 125 °C Inductive load td(off) td(on) tf tr |
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