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CM100DY-24A Datasheet(PDF) 2 Page - Mitsubishi Electric Semiconductor

Part No. CM100DY-24A
Description  IGBT MODULES HIGH POWER SWITCHING USE
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Maker  MITSUBISHI [Mitsubishi Electric Semiconductor]
Homepage  http://www.mitsubishichips.com
Logo MITSUBISHI - Mitsubishi Electric Semiconductor

CM100DY-24A Datasheet(HTML) 2 Page - Mitsubishi Electric Semiconductor

  CM100DY-24A_09 Datasheet HTML 1Page - Mitsubishi Electric Semiconductor CM100DY-24A_09 Datasheet HTML 2Page - Mitsubishi Electric Semiconductor CM100DY-24A_09 Datasheet HTML 3Page - Mitsubishi Electric Semiconductor CM100DY-24A_09 Datasheet HTML 4Page - Mitsubishi Electric Semiconductor CM100DY-24A_09 Datasheet HTML 5Page - Mitsubishi Electric Semiconductor  
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Feb. 2009
2
VCE = VCES, VGE = 0V
±VGE = VGES, VCE = 0V
Tj = 25
°C
Tj = 125
°C
VCC = 600V, IC = 100A, VGE = 15V
VCC = 600V, IC = 100A
VGE =
±15V
RG = 3.1
Ω, Inductive load
IE = 100A
IE = 100A, VGE = 0V
IGBT part (1/2 module)*1
FWDi part (1/2 module)*1
Case to heat sink, Thermal compound Applied (1/2 module)*1,*2
Collector cutoff current
Gate-emitter threshold
voltage
Gate leakage current
Collector-emitter saturation
voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Reverse recovery time
Reverse recovery charge
Emitter-collector voltage
Contact thermal resistance
External gate resistance
IC = 10mA, VCE = 10V
IC = 100A, VGE = 15V
VCE = 10V
VGE = 0V
1200
±20
100
200
100
200
672
–40 ~ +150
–40 ~ +125
2500
2.5 ~ 3.5
3.5 ~ 4.5
310
MITSUBISHI IGBT MODULES
CM100DY-24A
HIGH POWER SWITCHING USE
V
V
A
A
W
°C
°C
Vrms
N • m
g
1
0.5
3.0
17.5
1.5
0.34
100
70
400
350
150
3.8
0.186
0.34
42
mA
µA
nF
nC
ns
µC
V
K/W
2.1
2.4
500
5.0
0.022
3.1
7V
V
68
ns
ICES
IGES
Cies
Coes
Cres
QG
td(on)
tr
td(off)
tf
trr (Note 1)
Qrr (Note 1)
VEC(Note 1)
Rth(j-c)Q
Rth(j-c)R
Rth(c-f)
RG
Symbol
Parameter
VGE(th)
VCE(sat)
*1 : Case temperature (TC), heat sink temperature (Tf) measured point is just under the chips.
*2 : Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)].
Note 1. IE, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi).
2. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating.
3. Junction temperature (Tj) should not increase beyond 150
°C.
Collector-emitter voltage
Gate-emitter voltage
Maximum collector dissipation
Junction temperature
Storage temperature
Isolation voltage
Weight
G-E Short
C-E Short
DC, TC = 84
°C*1
Pulse
(Note 2)
Pulse
(Note 2)
TC = 25
°C*1
Terminals to base plate, f = 60Hz, AC 1 minute
Main terminals M5 screw
Mounting M6 screw
Typical value
Symbol
Parameter
Collector current
Emitter current
Torque strength
Conditions
Unit
Ratings
VCES
VGES
IC
ICM
IE (Note 1)
IEM (Note 1)
PC (Note 3)
Tj
Tstg
Viso
Unit
Typ.
Limits
Min.
Max.
Test conditions
ELECTRICAL CHARACTERISTICS (Tj = 25
°C, unless otherwise specified)
ABSOLUTE MAXIMUM RATINGS (Tj = 25
°C, unless otherwise specified)
Thermal resistance


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