2

Feb. 2009

Gate-emitter threshold voltage

Collector-emitter saturation voltage

°C

°C

±15V

Ω, Inductive load

°C

°C

IGBT part (1/2 module)

FWDi part (1/2 module)

Case temperature measured point is just under the chips

1700

±20

100

200

100

200

890

–40 ~ +150

–40 ~ +125

3500

3.5 ~ 4.5

3.5 ~ 4.5

400

MITSUBISHI IGBT MODULES

CM100DU-34KA

HIGH POWER SWITCHING USE

Symbol

V

V

W

°C

°C

Vrms

N • m

N • m

g

A

A

—

1

0.5

4.0

—

14

2.4

0.75

—

350

150

550

800

600

—

4.6

—

0.14

0.24

—

mA

µA

nF

nC

µC

V

V

K/W

—

—

3.2

3.8

—

—

—

450

—

—

—

—

—

5.8

—

2.2

—

—

0.04

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

5.5

V

V

ns

47

ns

Collector cutoff current

Gate leakage current

Input capacitance

Output capacitance

Reverse transfer capacitance

Total gate charge

Turn-on delay time

Turn-on rise time

Turn-off delay time

Turn-off fall time

Reverse recovery time

Reverse recovery charge

Emitter-collector voltage

Contact thermal resistance

Thermal resistance

Symbol

Parameter

°C.

4. Pulse width and repetition rate should be such as to cause negligible temperature rise.

Collector-emitter voltage

Gate-emitter voltage

Maximum collector dissipation

Junction temperature

Storage temperature

Isolation voltage

Weight

G-E Short

C-E Short

°C

Pulse

(Note 2)

°C

Pulse

(Note 2)

°C

Terminals to base plate, f = 60Hz, AC 1 minute

Main terminals M6 screw

Mounting M6 screw

Typical value

Parameter

Collector current

Emitter current

Torque strength

Conditions

Unit

Ratings

—

Unit

Typ.

Limits

Min.

Max.

—

Test conditions

°C, unless otherwise specified)

°C, unless otherwise specified)