CM75TU-12F_09 datasheet(3/4 Pages) MITSUBISHI

Part #	CM75TU-12F

Description	IGBT MODULES HIGH POWER SWITCHING USE

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Manufacturer	MITSUBISHI [Mitsubishi Electric Semiconductor]

Direct Link	http://www.mitsubishichips.com

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3 / 4 page

Feb. 2009

3

MITSUBISHI IGBT MODULES

CM75TU-12F

HIGH POWER SWITCHING USE

PERFORMANCE CURVES

150

100

50

125

75

25

0.5

1.5

2.5

3.5

1234

0

7.5

15

11

10

8.5

8

100

101

2

3

5

7

102

2

3

5

7

103

2

3

5

7

0

0.5

1

1.5

2

2.5

3

3.5

4

10–1

100

2

3

5

7

101

2

3

5

7

102

2

3

5

7

10–1 2

100

35 7

2

101

35 7

2

102

35 7

2.5

3

2

1.5

1

0.5

0

150

050

100

5

4

3

2

1

0

16

18

20

68

10

12

14

100

101

23 5 7

102

23 5 7

103

23 5 7

101

100

2

3

5

7

102

2

3

5

7

103

2

3

5

7

Tj=25

°C

VGE=20V

9

9.5

Tj = 25

°C

Tj = 125

°C

VGE = 15V

IC = 150A

IC = 75A

IC = 30A

Tj = 25

°C

Tj = 25

°C

Coes

Cies

Cres

VGE = 0V

VCC = 300V

VGE =

±15V

RG = 8.3

Ω

Tj = 125

°C

Conditions:

td(off)

td(on)

tf

tr

OUTPUT CHARACTERISTICS

(TYPICAL)

COLLECTOR-EMITTER VOLTAGE VCE (V)

COLLECTOR-EMITTER SATURATION

VOLTAGE CHARACTERISTICS

(TYPICAL)

COLLECTOR CURRENT IC (A)

GATE-EMITTER VOLTAGE VGE (V)

FREE-WHEEL DIODE

FORWARD CHARACTERISTICS

(TYPICAL)

EMITTER-COLLECTOR VOLTAGE VEC (V)

CAPACITANCE–VCE

CHARACTERISTICS

(TYPICAL)

HALF-BRIDGE

SWITCHING CHARACTERISTICS

(TYPICAL)

COLLECTOR-EMITTER VOLTAGE VCE (V)

COLLECTOR-EMITTER SATURATION

VOLTAGE CHARACTERISTICS

(TYPICAL)

COLLECTOR CURRENT IC (A)

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