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CM35MX-24A Datasheet(PDF) 4 Page - Mitsubishi Electric Semiconductor

Part No. CM35MX-24A
Description  IGBT MODULES HIGH POWER SWITCHING USE
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Maker  MITSUBISHI [Mitsubishi Electric Semiconductor]
Homepage  http://www.mitsubishichips.com
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CM35MX-24A Datasheet(HTML) 4 Page - Mitsubishi Electric Semiconductor

   
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Jan. 2009
4
MITSUBISHI IGBT MODULES
CM35MX-24A
HIGH POWER SWITCHING USE
Note.1: Case temperature (TC), heat sink temperature (Tf) measured point is just under the chips. (Refer to the figure of the chip location.)
2: Typical value is measured by using thermally conductive grease of
λ = 0.9W/(m·K).
3: IE, IERM, VEC, trr, Qrr and Err represent ratings and characteristics of the anti-parallel, emitter-collector free wheeling diode (FWDi).
IF, IFRM, VF, VRRM and IRRM represent ratings and characteristics of the Clamp diode of Brake part.
4: Pulse width and repetition rate should be such that the device junction temperature (Tj) dose not exceed Tjmax rating.
5: Junction temperature (Tj) should not increase beyond 150
°C.
6: Pulse width and repetition rate should be such as to cause negligible temperature rise.
(Refer to the figure of the test circuit for VCE(sat) and VEC)
7:
NTC THERMISTOR PART
Limits
Unit
Min.
Typ.
Max.
R
ΔR/R
B(25/50)
P25
Zero power resistance
Deviation of resistance
B constant
Power dissipation
TC = 25
°C
TC = 100
°C, R100 = 493Ω
Approximate by equation
TC = 25
°C
5.00
3375
5.15
+7.8
10
4.85
–7.3
k
Ω
%
K
mW
(Note. 7)
Symbol
Parameter
Conditions
Chip Location (Top view)
Dimensions in mm (tolerance:
±1mm)
MODULE
Rth(c-f)
Contact thermal resistance
(Case to fin)
Thermal grease applied
per 1 module
0.015
K/W
(Note. 2)
(Note. 1)
Limits
Unit
Min.
Typ.
Max.
Symbol
Parameter
Conditions
53
54
55
56
57
58
59
60
61
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15 16 17 18 19 20 21 22
52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31
30
29
28
27
26
25
24
23
(121.7)
(110)
0
LABEL SIDE
28.4
29.4
41.9
0
19.1
27.5 (Tr/UP, Tr/VP, Tr/WP)
28.6 (Di/Br, Th)
35.7
42.6
C
R
R
N
C
S
R
N
C
T
R
N
T
U
r
P
D
U
i
P
D
B
i
r
D
W
i
P
D
V
i
P
T
U
r
N
D
U
i
N
D
W
i
N
D
V
i
N
T
V
r
Th
P
T
B
r
r
T
W
r
P
T
W
r
N
T
V
r
N
C
R
R
P
C
S
R
P
C
T
R
P
Each mark points the center position of each chip. Tr**: IGBT, Di**: FWDi (DiBr: Clamp diode), CR**: Converter diode, Th: NTC thermistor
R25: resistance at absolute temperature T25 [K]; T25 = 25 [
°C]+273.15 = 298.15 [K]
R50: resistance at absolute temperature T50 [K]; T50 = 50 [
°C]+273.15 = 323.15 [K]
B(25/50) = In(
)/(
)
R25
R50
1
T25
1
T50


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