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CM35MX-24A Datasheet(PDF) 3 Page - Mitsubishi Electric Semiconductor |
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CM35MX-24A Datasheet(HTML) 3 Page - Mitsubishi Electric Semiconductor |
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3 / 8 page  Jan. 2009 3 ELECTRICAL and THERMAL RESISTANCE CHARACTERISTICS (Tj = 25 °C, unless otherwise specified) INVERTER PART Limits Unit Min. Typ. Max. ICES VGE(th) IGES VCE(sat) Cies Coes Cres QG td(on) tr td(off) tf trr (Note.3) Qrr (Note.3) VEC(Note.3) Rth(j-c)Q Rth(j-c)R RGint RG Collector cutoff current Gate-emitter threshold voltage Gate leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage Thermal resistance (Junction to case) Internal gate resistance External gate resistance VCE = VCES, VGE = 0V IC = 3.5mA, VCE = 10V ±VGE = VGES, VCE = 0V IC = 35A, VGE = 15V IC = 35A, VGE = 15V VCE = 10V VGE = 0V VCC = 600V, IC = 35A, VGE = 15V VCC = 600V, IC = 35A VGE = ±15V, RG = 9.1Ω Inductive load (IE = 35A) IE = 35A, VGE = 0V IE = 35A, VGE = 0V per IGBT per free wheeling diode TC = 25 °C, per switch — 7 — 2.0 2.2 1.9 — — — 180 — — — — — 1.5 2.6 2.16 2.5 — — 0 — 1 8 0.5 2.6 — — 6.0 0.53 0.12 — 100 50 300 600 200 — 3.4 — — 0.42 0.69 — 89 — 6 — — — — — — — — — — — — — — — — — — — — 8.9 mA V μA V nF nC ns μC V K/W Ω Tj = 25 °C Tj = 125 °C Chip (Note. 6) (Note. 1) (Note. 6) Tj = 25 °C Tj = 125 °C Chip (Note. 6) Symbol Parameter Conditions BRAKE PART Limits Unit Min. Typ. Max. ICES VGE(th) IGES VCE(sat) Cies Coes Cres QG IRRM(Note.3) VFM(Note.3) Rth(j-c)Q Rth(j-c)R RGint RG Collector cutoff current Gate-emitter threshold voltage Gate leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Repetitive peak reverse current Forward voltage drop Thermal resistance (Junction to case) Internal gate resistance External gate resistance VCE = VCES, VGE = 0V IC = 2mA, VCE = 10V ±VGE = VGES, VCE = 0V IC = 20A, VGE = 15V IC = 20A, VGE = 15V VCE = 10V VGE = 0V VCC = 600V, IC = 20A, VGE = 15V VR = VRRM IF = 20A IF = 20A per IGBT per Clamp diode TC = 25 °C — 7 — 2.0 2.2 1.9 — — — 150 — 2.6 2.16 2.5 — — 0 — 1 8 0.5 2.6 — — 5.1 0.45 0.1 — 1 3.4 — — 0.48 1.1 — 150 — 6 — — — — — — — — — — — — — — — 15 mA V μA V nF nC mA V K/W Ω Tj = 25 °C Tj = 125 °C Chip (Note. 6) (Note. 1) (Note. 6) Tj = 25 °C Tj = 125 °C Chip (Note. 6) Symbol Parameter Conditions IRRM VF Rth(j-c) Repetitive peak reverse current Forward voltage drop Thermal resistance (Junction to case) VR = VRRM, Tj = 150 °C IF = 35A per Diode — 1.2 — 4 1.6 0.45 — — — mA V K/W (Note. 1) Limits Unit Min. Typ. Max. Symbol Parameter Conditions CONVERTER PART MITSUBISHI IGBT MODULES CM35MX-24A HIGH POWER SWITCHING USE |
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