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CM35MX-24A Datasheet(PDF) 3 Page - Mitsubishi Electric Semiconductor

Part No. CM35MX-24A
Description  IGBT MODULES HIGH POWER SWITCHING USE
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Maker  MITSUBISHI [Mitsubishi Electric Semiconductor]
Homepage  http://www.mitsubishichips.com
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CM35MX-24A Datasheet(HTML) 3 Page - Mitsubishi Electric Semiconductor

   
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Jan. 2009
3
ELECTRICAL and THERMAL RESISTANCE CHARACTERISTICS (Tj = 25
°C, unless otherwise specified)
INVERTER PART
Limits
Unit
Min.
Typ.
Max.
ICES
VGE(th)
IGES
VCE(sat)
Cies
Coes
Cres
QG
td(on)
tr
td(off)
tf
trr (Note.3)
Qrr (Note.3)
VEC(Note.3)
Rth(j-c)Q
Rth(j-c)R
RGint
RG
Collector cutoff current
Gate-emitter threshold voltage
Gate leakage current
Collector-emitter saturation
voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Reverse recovery time
Reverse recovery charge
Emitter-collector voltage
Thermal resistance
(Junction to case)
Internal gate resistance
External gate resistance
VCE = VCES, VGE = 0V
IC = 3.5mA, VCE = 10V
±VGE = VGES, VCE = 0V
IC = 35A, VGE = 15V
IC = 35A, VGE = 15V
VCE = 10V
VGE = 0V
VCC = 600V, IC = 35A, VGE = 15V
VCC = 600V, IC = 35A
VGE =
±15V, RG = 9.1Ω
Inductive load
(IE = 35A)
IE = 35A, VGE = 0V
IE = 35A, VGE = 0V
per IGBT
per free wheeling diode
TC = 25
°C, per switch
7
2.0
2.2
1.9
180
1.5
2.6
2.16
2.5
0
1
8
0.5
2.6
6.0
0.53
0.12
100
50
300
600
200
3.4
0.42
0.69
89
6
8.9
mA
V
μA
V
nF
nC
ns
μC
V
K/W
Ω
Tj = 25
°C
Tj = 125
°C
Chip
(Note. 6)
(Note. 1)
(Note. 6)
Tj = 25
°C
Tj = 125
°C
Chip
(Note. 6)
Symbol
Parameter
Conditions
BRAKE PART
Limits
Unit
Min.
Typ.
Max.
ICES
VGE(th)
IGES
VCE(sat)
Cies
Coes
Cres
QG
IRRM(Note.3)
VFM(Note.3)
Rth(j-c)Q
Rth(j-c)R
RGint
RG
Collector cutoff current
Gate-emitter threshold voltage
Gate leakage current
Collector-emitter saturation
voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Repetitive peak reverse current
Forward voltage drop
Thermal resistance
(Junction to case)
Internal gate resistance
External gate resistance
VCE = VCES, VGE = 0V
IC = 2mA, VCE = 10V
±VGE = VGES, VCE = 0V
IC = 20A, VGE = 15V
IC = 20A, VGE = 15V
VCE = 10V
VGE = 0V
VCC = 600V, IC = 20A, VGE = 15V
VR = VRRM
IF = 20A
IF = 20A
per IGBT
per Clamp diode
TC = 25
°C
7
2.0
2.2
1.9
150
2.6
2.16
2.5
0
1
8
0.5
2.6
5.1
0.45
0.1
1
3.4
0.48
1.1
150
6
15
mA
V
μA
V
nF
nC
mA
V
K/W
Ω
Tj = 25
°C
Tj = 125
°C
Chip
(Note. 6)
(Note. 1)
(Note. 6)
Tj = 25
°C
Tj = 125
°C
Chip
(Note. 6)
Symbol
Parameter
Conditions
IRRM
VF
Rth(j-c)
Repetitive peak reverse current
Forward voltage drop
Thermal resistance
(Junction to case)
VR = VRRM, Tj = 150
°C
IF = 35A
per Diode
1.2
4
1.6
0.45
mA
V
K/W
(Note. 1)
Limits
Unit
Min.
Typ.
Max.
Symbol
Parameter
Conditions
CONVERTER PART
MITSUBISHI IGBT MODULES
CM35MX-24A
HIGH POWER SWITCHING USE


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