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SPN4906S8RGB Datasheet(PDF) 1 Page - SYNC POWER Crop. |
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SPN4906S8RGB Datasheet(HTML) 1 Page - SYNC POWER Crop. |
1 / 8 page 2009/07/20 Ver.1 Page 1 SPN4906 N-Channel Enhancement Mode MOSFET DESCRIPTION APPLICATIONS The SPN4906 is the Dual N-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where high-side switching , low in-line power loss, and resistance to transients are needed. Power Management in Note book Portable Equipment Battery Powered System DC/DC Converter Load Switch DSC LCD Display inverter FEATURES PIN CONFIGURATION(SOP – 8P) PART MARKING N-Channel 40V/6.0A,RDS(ON)= 45mΩ@VGS= 10V 40V/5.0A,RDS(ON)= 54mΩ@VGS= 4.5V 40V/4.5A,RDS(ON)= 83mΩ@VGS= 2.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOP – 8P package design |
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