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FGPF50N33BTTU Datasheet(PDF) 4 Page - Fairchild Semiconductor

Part # FGPF50N33BTTU
Description  330V, 50A PDP IGBT
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Manufacturer  FAIRCHILD [Fairchild Semiconductor]
Direct Link  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FGPF50N33BTTU Datasheet(HTML) 4 Page - Fairchild Semiconductor

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FGPF50N33BT Rev. A
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. VGE
Figure 8. Capacitance Characteristics
Figure 9. Gate charge Characteristics
Figure 10. SOA Characteristics
Figure 11. Turn-on Characteristics vs.
Figure 12. Turn-off Characteristics vs.
0
4
8
121620
0
4
8
12
16
20
IC = 20A
30A
50A
Common Emitter
TC = 125
o
C
Gate-Emitter Voltage, VGE [V]
110
0
500
1000
1500
Common Emitter
VGE = 0V, f = 1MHz
TC = 25
o
C
C
res
C
oes
C
ies
Collector-Emitter Voltage, VCE [V]
30
010
20
30
40
0
3
6
9
12
15
Common Emitter
TC = 25
o
C
200V
V
CC = 100V
Gate Charge, Qg [nC]
0.1
1
10
100
400
0.01
0.1
1
10
100
500
Single Nonrepetitive
Pulse TC = 25
oC
Curves must be derated
linearly with increase
in temperature
DC
10µs
100µs
Collector-Emitter Voltage, VCE [V]
0
1020304050
1
10
100
Common Emitter
VCC = 200V, VGE = 15V
IC = 20A
TC = 25
o
C
TC = 125
o
C
t
d(on)
t
r
Gate Resistance, RG [Ω]
0
102030
40
50
10
100
1000
4000
Common Emitter
VCC = 200V, VGE = 15V
IC = 20A
TC = 25
o
C
TC = 125
o
C
t
d(off)
t
f
Gate Resistance, RG [Ω]
Gate Resistance
Gate Resistance


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