tm

©2008 Fairchild Semiconductor Corporation

1

www.fairchildsemi.com

FGP5N60UFD Rev. A

October 2008

Absolute Maximum Ratings

Notes:

1: Repetitive rating: Pulse width limited by max. juntion temperature

Thermal Characteristics

Symbol

Description

Ratings

Units

Collector to Emitter Voltage

600

V

Gate to Emitter Voltage

± 20

V

Collector Current

A

Collector Current

A

Pulsed Collector Current

15

A

Maximum Power Dissipation

W

Maximum Power Dissipation

W

Operating Junction Temperature

-55 to +150

Storage Temperature Range

-55 to +150

Maximum Lead Temp. for soldering

Purposes, 1/8” from case for 5 seconds

300

Symbol

Parameter

Typ.

Max.

Units

Thermal Resistance, Junction to Case

-

1.55

Thermal Resistance, Junction to Case

-

3.2

Thermal Resistance, Junction to Ambient

-

62.5

G

E

C

1

TO-220

1.Gate 2.Collector 3.Emitter

FGP5N60UFD

600V, 5A Field Stop IGBT

Features

• High current capability

• High input impedance

• Fast switching

• RoHS compliant

Applications

• Induction Heating, UPS, SMPS, PFS

General Description

Using Novel Field Stop IGBT Technology, Fairchild’s new series

of Field Stop IGBTs offer the optimum performance for Induction

Heating, UPS, SMPS, and PFC applications where low conduc-

tion and switching losses are essential.