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FGA70N33BTD Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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FGA70N33BTD Datasheet(HTML) 1 Page - Fairchild Semiconductor |
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1 / 9 page  tm ©2008 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FGA70N33BTD Rev. A November 2008 Absolute Maximum Ratings T C = 25°C unless otherwise noted Thermal Characteristics Notes: 1: Repetitive test , Pulse width=100usec , Duty=0.1 2: Half Sine Wave, D< 0.01, pluse width < 5usec *IC_pulse limited by max Tj Symbol Description Ratings Units VCES Collector to Emitter Voltage 330 V VGES Gate to Emitter Voltage ± 30 V ICpulse(1)* Pulsed Collector Current @ TC = 25 oC 160 A IC pulse(2)* Pulsed Collector Current @ TC = 25 oC 220 A PD Maximum Power Dissipation @ TC = 25 oC149 W Maximum Power Dissipation @ TC = 100 oC60 W VRRM Peak Repetitive Reverse Voltage of Diode 330 V IF(AV) Average Rectified Forward Current of diode @ TC = 100 oC10 A IFSM Non-repetitive Peak Surge Current of diode 60Hz Single Half-Sine wave 100 A TJ, Tstg Operating Junction Temperature and Storage Temperrature -55 to +150 oC TL Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds 300 oC Symbol Parameter Typ. Max. Units RθJC(IGBT) Thermal Resistance, Junction to Case -- 0.84 oC/W RθJC(Diode) Thermal Resistance, Junction to Case -- 1.57 oC/W RθJA Thermal Resistance, Junction to Ambient -- 40 oC/W G C E TO-3P G C E FGA70N33BTD 330V, 70A PDP IGBT Features • High current capability • Low saturation voltage: VCE(sat) =1.7V @ IC = 70A • High input impedance • Fast switching •RoHS Compliant Applications • PDP System General Description Using Novel Trench IGBT Technology, Fairchild’s new series of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential. |
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