tm

©2009 Fairchild Semiconductor Corporation

1

www.fairchildsemi.com

FGH30N120FTD

Rev. A

May 2009

Absolute Maximum Ratings

Notes:

1: Repetitive rating: Pulse width limited by max. junction temperature

Thermal Characteristics

Symbol

Description

Ratings

Units

Collector to Emitter Voltage

1200

V

Gate to Emitter Voltage

± 25

V

Collector Current

A

Collector Current

A

Pulsed Collector Current

90

A

Diode Continuous Forward Current

30

A

Maximum Power Dissipation

W

Maximum Power Dissipation

W

Operating Junction Temperature

-55 to +150

Storage Temperature Range

-55 to +150

Maximum Lead Temp. for soldering

Purposes, 1/8” from case for 5 seconds

300

Symbol

Parameter

Typ.

Max.

Units

Thermal Resistance, Junction to Case

-

0.38

Thermal Resistance, Junction to Case

-

1.2

Thermal Resistance, Junction to Ambient

-

40

G

E

C

G C E

TO-3P

FGA30N120FTD

1200V, 30A Trench IGBT

Features

• Field stop trench technology

• High speed switching

• High input impedance

Applications

• Induction heating and Microwave oven

• Soft switching applications

General Description

Using advanced field stop trench technology, Fairchild’s 1200V

trench IGBTs offer superior conduction and switching perfor-

mances, and easy parallel operation with exceptional avalanche

ruggedness. This device is designed for soft switching applica-

tions.