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FDPF17N60NT Datasheet(PDF) 2 Page - Fairchild Semiconductor |
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FDPF17N60NT Datasheet(HTML) 2 Page - Fairchild Semiconductor |
2 / 9 page FDP17N60N/FDPF17N60NT Rev. A www.fairchildsemi.com 2 Package Marking and Ordering Information Electrical Characteristics T C = 25 oC unless otherwise noted Off Characteristics On Characteristics Dynamic Characteristics Switching Characteristics Drain-Source Diode Characteristics Device Marking Device Package Reel Size Tape Width Quantity FDP17N60N FDP17N60N TO-220 - - 50 FDPF17N60NT FDPF17N60NT TO-220F - - 50 Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V, TC = 25oC 600 - - V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient ID = 250µA, Referenced to 25oC- 0.8 - V/oC IDSS Zero Gate Voltage Drain Current VDS = 600V, VGS = 0V - - 1 µA VDS = 480V, VGS = 0V,TC = 150oC- - 10 IGSS Gate to Body Leakage Current VGS = ±30V, VDS = 0V - - ±100 nA VGS(th) Gate Threshold Voltage VGS = VDS, ID = 250µA3.0 - 5.0 V RDS(on) Static Drain to Source On Resistance VGS = 10V, ID = 8.5A - 0.29 0.34 Ω gFS Forward Transconductance VDS = 20V, ID = 8.5A (Note 4) -21 - S Ciss Input Capacitance VDS = 25V, VGS = 0V f = 1MHz - 2285 3040 pF Coss Output Capacitance - 310 410 pF Crss Reverse Transfer Capacitance - 23 35 pF Qg(tot) Total Gate Charge at 10V VDS = 480V ID = 17A VGS = 10V (Note 4, 5) -48 65 nC Qgs Gate to Source Gate Charge - 13 - nC Qgd Gate to Drain “Miller” Charge - 20 - nC td(on) Turn-On Delay Time VDD = 300V, ID = 17A VGS = 10V, RGEN = 25Ω (Note 4, 5) - 48 106 ns tr Turn-On Rise Time - 79 168 ns td(off) Turn-Off Delay Time - 128 266 ns tf Turn-Off Fall Time - 62 134 ns IS Maximum Continuous Drain to Source Diode Forward Current - - 74 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 68 A VSD Drain to Source Diode Forward Voltage VGS = 0V, ISD = 17A - - 1.4 V trr Reverse Recovery Time VGS = 0V, ISD = 17A dIF/dt = 100A/µs (Note 4) - 575 - ns Qrr Reverse Recovery Charge - 7.2 - µC Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 5.8mH, IAS = 17A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 17A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics |
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