FDP10N50F datasheet(3/9 Pages) FAIRCHILD

Part #	FDP10N50F

Description	N-Channel MOSFET 500V, 9A, 0.85廓

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Manufacturer	FAIRCHILD [Fairchild Semiconductor]

Direct Link	http://www.fairchildsemi.com

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FDP10N50F / FDPF10N50FT Rev. A

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3

Typical Performance Characteristics

Figure 1. On-Region Characteristics

Figure 2. Transfer Characteristics

Figure 3. On-Resistance Variation vs.

Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage

Variation vs. Source Current

and Temperature

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

0.1

1

10

0.1

1

10

20

*Notes:

1. 250μs Pulse Test

2. TC = 25

oC

VGS = 15.0 V

12.0 V

10.0 V

8.0 V

7.0 V

6.5 V

6.0 V

5.5 V

VDS,Drain-Source Voltage[V]

2

468

10

0.1

1

10

30

-55

oC

150

oC

*Notes:

1. VDS = 20V

2. 250μs Pulse Test

25

oC

VGS,Gate-Source Voltage[V]

0

4

8

121620

0.6

0.8

1.0

1.2

1.4

*Note: TC = 25

oC

VGS = 20V

VGS = 10V

ID, Drain Current [A]

0.0

0.4

0.8

1.2

1.6

0.1

1

10

30

*Notes:

1. V

GS = 0V

2. 250μs Pulse Test

150

oC

V

SD, Body Diode Forward Voltage [V]

25

oC

0.1

110

30

0

500

1000

1500

2000

Coss

Ciss

Ciss = Cgs + Cgd (Cds = shorted)

Coss = Cds + Cgd

Crss = Cgd

*Note:

1. VGS = 0V

2. f = 1MHz

Crss

VDS, Drain-Source Voltage [V]

0

4

8

12

16

20

0

2

4

6

8

10

*Note: ID = 10A

VDS = 100V

VDS = 250V

VDS = 400V

Qg, Total Gate Charge [nC]

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