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FDP8440 Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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FDP8440 Datasheet(HTML) 1 Page - Fairchild Semiconductor |
1 / 8 page tm ©2009 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDP8440 Rev. A6 January 2009 FDP8440 N-Channel PowerTrench® MOSFET 40V, 277A, 2.2m Ω Features •RDS(on) = 1.64mΩ (Typ.)@ VGS = 10V, ID = 80A •Qg(tot) = 345nC (Typ.)@ VGS = 10V • Low Miller Charge •Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) •RoHS Compliant Application • Automotive Engine Control • Powertrain Management • Motors, Solenoids • Electronic Steering • Integrated Starter/ Alternator • Distributed Power Architectures and VRMs • Primary Switch for 12V Systems MOSFET Maximum Ratings Thermal Characteristics TO-220 FDP Series G D S D G S Symbol Parameter Ratings Units VDSS Drain to Source Voltage 40 V VGSS Gate to Source Voltage ±20 V ID Drain Current - Continuous (TC = 25oC, Silicon Limited) - Continuous (TC = 100oC, Silicon Limited) - Continuous (TC = 25oC, Package Limited) 277* 196* 100 A IDM Drain Current - Pulsed (Note 1) 500 A EAS Single Pulsed Avalanche Energy (Note 2) 1682 mJ PD Power Dissipation (TC = 25oC) 306 W - Derate above 25oC2.04 W/oC TJ, TSTG Operating and Storage Temperature Range -55 to +175 oC TL Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds 300 oC RθJC Thermal Resistance, Junction to Case 0.49 oC/W RθCS Thermal Resistance, Case to Sink (Typ.) 0.5 oC/W RθJA Thermal Resistance, Junction to Ambient 62.5 oC/W TC = 25oC unless otherwise noted *Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 100A. |
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