tm

October

©2008 Fairchild Semiconductor Corporation

FDP19N40 / FDPF19N40 Rev. A

www.fairchildsemi.com

1

UniFET

TM

FDP19N40 / FDPF19N40

N-Channel MOSFET

400V, 19A, 0.24

Ω

Features

• Low Gate Charge ( Typ. 32nC)

• Fast Switching

• 100% Avalanche Tested

• Improved dv/dt Capability

• RoHS Compliant

Description

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary, planar

stripe, DMOS technology.

This advanced technology has been especially tailored to

minimize

on-state

resistance,

provide

superior

switching

performance, and withstand high energy pluse in the avalanche

and commutation mode. These devices are well suited for high

efficient switched mode power suppliesand active power

factor correction.

D

G

S

TO-220F

FDPF Series

G

S

D

TO-220

FDP Series

G

S

D

Thermal Characteristics

Symbol

Parameter

FDP19N40

FDPF19N40

Units

Drain to Source Voltage

400

V

Gate to Source Voltage

±30

V

Drain Current

19

19*

A

11.4

11.4*

Drain Current

- Pulsed

(Note 1)

76

76*

A

Single Pulsed Avalanche Energy

(Note 2)

542

mJ

Avalanche Current

(Note 1)

19

A

Repetitive Avalanche Energy

(Note 1)

21.5

mJ

dv/dt

Peak Diode Recovery dv/dt

(Note 3)

15

V/ns

Power Dissipation

215

40

W

1.65

0.3

Operating and Storage Temperature Range

-55 to +150

Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

300

Symbol

Parameter

FDP19N40

FDPF19N40

Units

Thermal Resistance, Junction to Case

0.6

3.0

Thermal Resistance, Case to Sink Typ.

0.5

-

Thermal Resistance, Junction to Ambient

62.5

62.5

*Drain current limited by maximum junction temperature