FDP15N40 / FDPF15N40 Rev. A

www.fairchildsemi.com

2

Electrical Characteristics

Off Characteristics

On Characteristics

Dynamic Characteristics

Switching Characteristics

Drain-Source Diode Characteristics

Device Marking

Device

Package

Reel Size

Tape Width

Quantity

FDP15N40

FDP15N40

TO-220

-

-

50

FDPF15N40

FDPF15N40

TO-220F

-

-

50

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

Drain to Source Breakdown Voltage

400

-

-

V

ΔBV

DSS

ΔT

J

Breakdown Voltage Temperature

Coefficient

0.5

-

Zero Gate Voltage Drain Current

-

-

1

μA

-

10

Gate to Body Leakage Current

-

-

±100

nA

Gate Threshold Voltage

-

5.0

V

Static Drain to Source On Resistance

-

0.24

0.3

Ω

Forward Transconductance

(Note 4)

-

15.3

-

S

Input Capacitance

f = 1MHz

-

1310

1750

pF

Output Capacitance

-

210

280

pF

Reverse Transfer Capacitance

-

17

25

pF

Total Gate Charge at 10V

(Note 4, 5)

-28

36

nC

Gate to Source Gate Charge

-

8

-

nC

Gate to Drain “Miller” Charge

-

12

-

nC

Turn-On Delay Time

(Note 4, 5)

-26

62

ns

Turn-On Rise Time

-

55

120

ns

Turn-Off Delay Time

-

72

154

ns

Turn-Off Fall Time

-

40

90

ns

Maximum Continuous Drain to Source Diode Forward Current

-

-

15

A

Maximum Pulsed Drain to Source Diode Forward Current

-

-

60

A

Drain to Source Diode Forward Voltage

-

-

1.4

V

Reverse Recovery Time

(Note 4)

-

333

-

ns

Reverse Recovery Charge

-

3.24

-

μC

Notes:

1: Repetitive Rating: Pulse width limited by maximum junction temperature

4: Pulse Test: Pulse width

≤ 300μs, Duty Cycle ≤ 2%

5: Essentially Independent of Operating Temperature Typical Characteristics