April 2009

©2008 Fairchild Semiconductor Corporation

FDMS7680 Rev.C

www.fairchildsemi.com

1

FDMS7680

30 V, 6.9 m

Ω

Features

and high efficiency

Next generation enhanced body diode technology, engineered

for soft recovery.

MSL1 robust package design

100% UIL tested

RoHS Compliant

General Description

This N-Channel MOSFET has been designed specifically to

improve the overall efficiency and to minimize switch node

ringing of DC/DC converters using either synchronous or

conventional switching PWM controllers. It has been optimized

diode reverse recovery performance.

Applications

IMVP Vcore Switching for Notebook

VRM Vcore Switching for Desktop and Server

OringFET / Load Switch

DC-DC Conversion

G

S

S

S

D

D

D

D

5

6

7

8

3

2

1

4

Bottom

Power 56

Top

Pin 1

G

S

S

S

D

D

D

D

Thermal Characteristics

Package Marking and Ordering Information

Symbol

Parameter

Ratings

Units

Drain to Source Voltage

30

V

Gate to Source Voltage

+/-20

V

Drain Current -Continuous (Package limited)

28

A

-Continuous (Silicon limited)

53

-Continuous

(Note 1a)

14

-Pulsed

80

Single Pulse Avalanche Energy

(Note 3)

29

mJ

Power Dissipation

33

W

Power Dissipation

(Note 1a)

2.5

Operating and Storage Junction Temperature Range

-55 to +150

°C

Thermal Resistance, Junction to Case

3.7

°C/W

Thermal Resistance, Junction to Ambient

(Note 1a)

50

Device Marking

Device

Package

Reel Size

Tape Width

Quantity

FDMS7680

FDMS7680

Power 56

13 ’’

12 mm

3000 units