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FDMS7658AS Datasheet(PDF) 6 Page - Fairchild Semiconductor |
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FDMS7658AS Datasheet(HTML) 6 Page - Fairchild Semiconductor |
6 / 8 page FDMS7658AS Rev.C www.fairchildsemi.com 6 SyncFET Schottky body diode Characteristics Fairchild’s SyncFET process embeds a Schottky diode in parallel with PowerTrench MoSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 14 shows the reverses recovery characteristic of the FDMS7658AS. Schottky barrier diodes exhibit significant leakage at high tem- perature and high reverse voltage. This will increase the power in the device. Typical Characteristics (continued) Figure 14. FDMS7658AS SyncFET body diode reverse recovery characteristic Figure 15. SyncFET body diode reverses leakage versus drain-source voltage 0 5 10 15 20 25 30 10 -6 10 -5 10 -4 10 -3 10 -2 TJ = 125 oC TJ = 100 oC TJ = 25 oC V DS, REVERSE VOLTAGE (V) 0 50 100 150 200 -5 0 5 10 15 20 25 30 di/dt = 300 A/µs TIME (ns) |
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