FDMS7658AS Rev.C

www.fairchildsemi.com

6

SyncFET Schottky body diode

Characteristics

Fairchild’s SyncFET process embeds a Schottky diode in parallel

with PowerTrench MoSFET. This diode exhibits similar

characteristics to a discrete external Schottky diode in parallel

with a MOSFET. Figure 14 shows the reverses recovery

characteristic of the FDMS7658AS.

Schottky barrier diodes exhibit significant leakage at high tem-

perature and high reverse voltage. This will increase the power

in the device.

Figure 14. FDMS7658AS SyncFET body

diode reverse recovery characteristic

Figure 15. SyncFET body diode reverses

leakage versus drain-source voltage

0

5

10

15

20

25

30

10

-6

10

-5

10

-4

10

-3

10

-2

V

0

50

100

150

200

-5

0

5

10

15

20

25

30

TIME (ns)