STP3481

P Channel Enhancement Mode MOSFET

-5.2A

120 Bentley Square, Mountain View, Ca 94040 USA

www.stansontech.com

STP3481 2006. V1

2

※

STP3481S6RG

S6 : TSOP-6P ; R : Tape Reel ; G : Pb – Free

ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted )

Parameter

Symbol

Typical

Unit

Drain-Source Voltage

-30

V

Gate-Source Voltage

±

20

V

Continuous Drain CurrentTJ=150℃)

-5.2

-4.2

A

Pulsed Drain Current

-20

A

Continuous Source Current (Diode Conduction)

-1.7

A

Power Dissipation

2.0

1.3

W

Operation Junction Temperature

150

℃

Storgae Temperature Range

-55/150

℃

Thermal Resistance-Junction to Ambient

90

℃

/W