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STM5853 Datasheet(PDF) 3 Page - Stanson Technology

Part No. STM5853
Description  P Channel Mode MOSFET with Schottky
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Maker  STANSON [Stanson Technology]
Homepage  http://www.stansontech.com
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STM5853 Datasheet(HTML) 3 Page - Stanson Technology

   
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STM5853
P Channel Mode MOSFET with Schottky
-3.6A
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com
STM5853 2008. V1
ELECTRICAL CHARACTERISTICS (Ta = 25℃ unless otherwise noted )
MOSFET
Parameter
Symbol
Condition
Min
Typ
Max Unit
Static
Drain-Source Breakdown Voltage
V(BR)DSS
VGS=0V,ID=-250uA
-20
V
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=-250uA
-0.35
-0.8
V
Gate Leakage Current
IGSS
VDS=0V,VGS=+/-12V
100
nA
VDS=-20V,VGS=0V
-1
Zero Gate Voltage Drain Current
IDSS
VDS=-20V, VGS =0V
Tj=55℃
-5
uA
On-State Drain Current
ID(on)
VDS≦-5V, VGS =-4.5V -6.0
A
Drain-source On-Resistance
RDS(on)
VGS =-4.5V, ID=3.4A
VGS =-2.5V, ID=-2.4A
VGS =-1.8V, ID=-1.7A
0.077
0.098
0.135
Ω
Forward Transconductance
gfs
VDS =-5V, ID=-2.8V
6
S
Diode Forward Voltage
VSD
IS=-1.6A,V VGS=0V
-0.8
-1.2
V
Dynamic
Total Gate Charge
Qg
4.8
8
Gate-Source Charge
Qgs
1.0
Gate-Drain Charge
Qgd
VDS=-6V, VGS =-4.5V
ID=-2.8A
1.0
nC
Input Capacitance
Ciss
485
Output Capacitance
Coss
85
Reverse Transfer Capacitance
Crss
VDS=-6V, VGS =0V
f=1MHz
40
pF
10
25
Turn-On Time
td(on)
tr
13
60
18
70
Turn-Off Time
td(off)
tf
VDD=-6V,RL=6Ω
ID=-1A,VGEN=-4.5V
RG=6Ω
15
60
nS
SCHOTTKY
IF=0.5A
0.38
0.46
V
Forward Voltage Drop
VF
IF=0.5A, Tj=125C
0.33
0.4
V
VR=20V
100
Max Reverse Leakage Current
IR
VR=20V, Tj=85C
1000
nA
Junction Capacitance
CT
VR=10V
31
pF


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