FDMC8882 datasheet(2/7 Pages) FAIRCHILD

Part #	FDMC8882

Description	N-Channel Power Trench짰 MOSFET 30 V, 16 A, 14.3 m

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Manufacturer	FAIRCHILD [Fairchild Semiconductor]

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FDMC8882 Rev.C

Electrical Characteristics T

J = 25 °C unless otherwise noted

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

Off Characteristics

BVDSS

Drain to Source Breakdown Voltage

ID = 250 PA, VGS = 0 V

30

V

'BVDSS

'TJ

Breakdown Voltage Temperature

Coefficient

ID = 250 PA, referenced to 25 °C

25

mV/°C

IDSS

Zero Gate Voltage Drain Current

VDS = 24 V, VGS = 0 V

1

PA

TJ = 125 °C

250

IGSS

Gate to Source Leakage Current

VGS = ±20 V, VDS = 0 V

±100

nA

On Characteristics

VGS(th)

Gate to Source Threshold Voltage

VGS = VDS, ID = 250 PA

1.2

1.9

2.5

V

'VGS(th)

'TJ

Gate to Source Threshold Voltage

Temperature Coefficient

ID = 250 PA, referenced to 25 °C

-5

mV/°C

rDS(on)

Static Drain to Source On Resistance

VGS = 10 V, ID = 10.5 A

12.4

14.3

m

:

VGS = 4.5 V, ID = 8.3 A

16.0

22.5

VGS = 10 V, ID = 10.5 A

TJ = 125 °C

17.4

gFS

Forward Transconductance

VDD = 5 V, ID = 10.5 A

33

S

Dynamic Characteristics

Ciss

Input Capacitance

VDS = 15 V, VGS = 0 V,

f = 1 MHz

710

945

pF

Coss

Output Capacitance

140

185

pF

Crss

Reverse Transfer Capacitance

90

135

pF

Switching Characteristics

td(on)

Turn-On Delay Time

VDD = 15 V, ID = 10.5 A,

VGS = 10 V, RGEN = 6 :

714

ns

tr

Rise Time

310

ns

td(off)

Turn-Off Delay Time

17

30

ns

tf

Fall Time

210

ns

Qg(TOT)

Total Gate Charge

VGS = 0 V to 10 V

VDD = 15 V

ID = 10.5 A

14

20

nC

Total Gate Charge

VGS = 0 V to 4.5 V

7

10

nC

Qgs

Total Gate Charge

2.3

nC

Qgd

Gate to Drain “Miller” Charge

2.8

nC

Drain-Source Diode Characteristics

VSD

Source to Drain Diode Forward Voltage

VGS = 0 V, IS = 10.5 A

(Note 2)

0.88

1.2

V

VGS = 0 V, IS = 1.9 A

(Note 2)

0.76

1.2

trr

Reverse Recovery Time

IF = 10.5 A, di/dt = 100 A/Ps

16

28

ns

Qrr

Reverse Recovery Charge

4.4

10

nC

NOTES:

1. RTJA is determined with the device mounted on a 1 in

2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RTJC is guaranteed by design while RTCA is determined by

the user's board design.

2. Pulse Test: Pulse Width < 30

0 Ps, Duty cycle < 2.0 %.

a. 53 °C/W when mounted on

a 1 in2 pad of 2 oz copper

b.125 °C/W when mounted on

a minimum pad of 2 oz copper

Rg

Gate Resistance

1.0

:

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