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FDMA6023PZT Datasheet(PDF) 2 Page - Fairchild Semiconductor |
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FDMA6023PZT Datasheet(HTML) 2 Page - Fairchild Semiconductor |
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2 / 7 page  www.fairchildsemi.com 2 ©2009 Fairchild Semiconductor Corporation FDMA6023PZT Rev.B1 Electrical Characteristics T J = 25 °C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = -250 µA, VGS = 0 V -20 V ∆BV DSS ∆T J Breakdown Voltage Temperature Coefficient ID = -250 µA, referenced to 25 °C -12 mV/°C IDSS Zero Gate Voltage Drain Current VDS = -16 V, VGS = 0 V -1 µA IGSS Gate to Source Leakage Current VGS = ±8 V, VDS = 0 V ±10 µA On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = -250 µA -0.4 -0.5 -1.5 V ∆V GS(th) ∆T J Gate to Source Threshold Voltage Temperature Coefficient ID = -250 µA, referenced to 25 °C -2.7 mV/°C rDS(on) Drain to Source On Resistance VGS = -4.5 V, ID = -3.6 A 40 60 m Ω VGS = -2.5 V, ID = -3.0 A 49 80 VGS = -1.8 V, ID = -2.0 A 60 110 VGS = -1.5 V, ID = -1.0 A 70 170 VGS = -4.5 V, ID = -3.6 A, TJ = 125 °C 58 72 gFS Forward Transconductance VDD = -5 V, ID = -3.6 A 15 S Dynamic Characteristics Ciss Input Capacitance VDS = -10 V, VGS = 0 V, f = 1 MHz 665 885 pF Coss Output Capacitance 115 155 pF Crss Reverse Transfer Capacitance 100 150 pF Switching Characteristics td(on) Turn-On Delay Time VDD = -10 V, ID = -3.6 A, VGS = -4.5 V, RGEN = 6 Ω 13 23 ns tr Rise Time 11 20 ns td(off) Turn-Off Delay Time 75 120 ns tf Fall Time 47 75 ns Qg Total Gate Charge VGS = 0 V to -4.5 V VDD = -10 V, ID = -3.6 A 12 17 nC Qgs Gate to Source Charge 1.4 nC Qgd Gate to Drain “Miller” Charge 5.2 nC Drain-Source Diode Characteristics IS Maximum Continuous Drain-Source Diode Forward Current -1.1 A VSD Source to Drain Diode Forward Voltage VGS = 0 V, IS = -1.1 A (Note 2) -0.7 -1.2 V trr Reverse Recovery Time IF = -3.6 A, di/dt = 100 A/µs 33 53 ns Qrr Reverse Recovery Charge 15 27 nC |
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