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FDFME3N311ZT Datasheet(PDF) 2 Page - Fairchild Semiconductor |
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FDFME3N311ZT Datasheet(HTML) 2 Page - Fairchild Semiconductor |
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2 / 8 page  www.fairchildsemi.com 2 ©2009 Fairchild Semiconductor Corporation FDFME3N311ZT Rev.C2 Electrical Characteristics T J = 25 °C unless otherwise noted Off Characteristics On Characteristics Dynamic Characteristics Switching Characteristics Drain-Source Diode Characteristics Schottky Diode Characteristics Symbol Parameter Test Conditions Min Typ Max Units BVDSS Drain to Source Breakdown Voltage ID = 250 µA, VGS = 0 V 30 V ∆BV DSS ∆T J Breakdown Voltage Temperature Coefficient ID = 250 µA, referenced to 25 °C 25 mV/°C IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1 µA IGSS Gate to Source Leakage Current VGS = ±12 V, VDS = 0 V ±10 µA VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 µA 0.511.5 V ∆V GS(th) ∆T J Gate to Source Threshold Voltage Temperature Coefficient ID = 250 µA, referenced to 25 °C -3 mV/°C rDS(on) Drain to Source On Resistance VGS = 4.5 V, ID = 1.6 A 235 299 m Ω VGS = 2.5 V, ID = 1.3 A 296 410 VGS = 4.5 V, ID = 1.6 A,TJ = 150 °C 327 420 gFS Forward Transconductance VDS = 5 V, ID = 1.6 A 2.8 S Ciss Input Capacitance VDS = 15 V, VGS = 0 V, f = 1 MHz 55 75 pF Coss Output Capacitance 15 20 pF Crss Reverse Transfer Capacitance 7 10 pF Rg Gate Resistance 7.5 Ω td(on) Turn-On Delay Time VDD = 15 V, ID = 1.6 A VGS = 4.5 V, RGEN = 6 Ω 612 ns tr Rise Time 816 ns td(off) Turn-Off Delay Time 22 35 ns tf Fall Time 1.4 2.8 ns Qg Total Gate Charge VGS = 4.5 V VDD = 15 V ID = 1.6 A 11.4 nC Qgs Gate to Source Gate Charge 0.2 nC Qgd Gate to Drain “Miller” Charge 0.3 nC IS Maximum continuous Drain-Source Diode Forward Current 1.6 A VSD Source to Drain Diode Forward Voltage VGS = 0 V, IS = 0.9 A (Note 2) 0.9 1.2 V trr Reverse Recovery Time IF = 1.6 A, di/dt = 100 A/µs 12 22 ns Qrr Reverse Recovery Charge 3.1 10 nC IR Reverse Leakage VR = 28 V TJ = 25 °C TJ = 85 °C 15 100 µA 0.46 4.7 mA VF Forward Voltage IF = 1 A TJ = 25 °C TJ = 85 °C 0.47 0.57 V 0.45 VF Forward Voltage IF = 500 mA TJ = 25 °C TJ = 85 °C 0.38 0.48 V 0.33 |
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