FDB120N10 datasheet(3/8 Pages) FAIRCHILD

Part #	FDB120N10

Description	N-Channel PowerTrench짰 MOSFET 100V, 74A, 12m廓

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Manufacturer	FAIRCHILD [Fairchild Semiconductor]

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FDB120N10 Rev. A

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3

Typical Performance Characteristics

Figure 1. On-Region Characteristics

Figure 2. Transfer Characteristics

Figure 3. On-Resistance Variation vs.

Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage

Variation vs. Source Current

and Temperature

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

0.1

1

10

0.2

1

10

100

1000

3000

*Notes:

1. 250μs Pulse Test

2. TC = 25

o

C

VGS = 15.0 V

10.0 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V

VDS, Drain-Source Voltage[V]

3456789

1

10

100

500

-55

o

C

175

o

C

*Notes:

1. VDS = 10V

2. 250μs Pulse Test

25

o

C

VGS, Gate-Source Voltage[V]

0

50

100

150

200

250

300

0.00

0.01

0.02

0.03

0.04

*Note: TC = 25

o

C

VGS = 20V

VGS = 10V

ID, Drain Current [A]

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1

10

100

500

*Notes:

1. V

GS = 0V

2. 250μs Pulse Test

175

o

C

V

SD, Body Diode Forward Voltage [V]

25

o

C

0.1

1

10

30

0

1400

2800

4200

5600

7000

Coss

Ciss

Ciss = Cgs + Cgd (Cds = shorted)

Coss = Cds + Cgd

Crss = Cgd

*Note:

1. VGS = 0V

2. f = 1MHz

Crss

VDS, Drain-Source Voltage [V]

0

2040

6080

0

2

4

6

8

10

*Note: ID =74A

VDS = 25V

VDS = 50V

VDS = 80V

Qg, Total Gate Charge [nC]

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