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FCPF11N60NT Datasheet(PDF) 1 Page - Fairchild Semiconductor

Part # FCPF11N60NT
Description  N-Channel MOSFET 600V, 10.8A, 0.299廓
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Manufacturer  FAIRCHILD [Fairchild Semiconductor]
Direct Link  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FCPF11N60NT Datasheet(HTML) 1 Page - Fairchild Semiconductor

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tm
August 2009
©2009 Fairchild Semiconductor Corporation
FCP11N60N / FCPF11N60NT Rev. A
www.fairchildsemi.com
1
SupreMOS
TM
FCP11N60N / FCPF11N60NT
N-Channel MOSFET
600V, 10.8A, 0.299
Ω
Features
•RDS(on) = 0.255Ω ( Typ.)@ VGS = 10V, ID = 5.4A
• Ultra Low Gate Charge ( Typ. Qg = 27.4nC)
• Low Effective Output Capacitance
• 100% Avalanche Tested
• RoHS Compliant
Description
The SupreMOS MOSFET, Fairchild’s next generation of high
voltage super-junction MOSFETs, employs a deep trench filling
process that differentiates it from preceding multi-epi based
technologies. By utilizing this advanced technology and precise
process control, SupreMOS provides world class Rsp, superior
switching performance and ruggedness.
This SupreMOS MOSFET fits the industry’s AC-DC SMPS
requirements for PFC, server/telecom power, FPD TV power,
ATX power, and industrial power applications.
D
G
S
TO-220F
FCPF Series
G
S
D
G D S
TO-220
FCP Series
MOSFET Maximum Ratings T
C = 25
oC unless otherwise noted*
Thermal Characteristics
Symbol
Parameter
FCP11N60N FCPF11N60NT
Units
VDSS
Drain to Source Voltage
600
V
VGSS
Gate to Source Voltage
±30
V
ID
Drain Current
-Continuous (TC = 25oC)
10.8
10.8*
A
-Continuous (TC = 100oC)
6.8
6.8*
IDM
Drain Current
- Pulsed
(Note 1)
32.4
32.4*
A
EAS
Single Pulsed Avalanche Energy
(Note 2)
201.7
mJ
IAR
Avalanche Current
3.7
A
EAR
Repetitive Avalanche Energy
0.94
mJ
dv/dt
MOSFET dv/dt Ruggedness
100
V/ns
Peak Diode Recovery dv/dt
(Note 3)
20
V/ns
PD
Power Dissipation
(TC = 25oC)
94.0
32.1
W
- Derate above 25oC0.75
0.26
W/oC
TJ, TSTG
Operating and Storage Temperature Range
-55 to +150
oC
TL
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
300
oC
Symbol
Parameter
FCP11N60N FCPF11N60NT
Units
RθJC
Thermal Resistance, Junction to Case
1.33
3.9
oC/W
RθCS
Thermal Resistance, Case to Heat Sink (Typical)
0.5
0.5
RθJA
Thermal Resistance, Junction to Ambient
62.5
62.5
*Drain current limited by maximum junction temperature


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