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FCPF11N60NT Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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FCPF11N60NT Datasheet(HTML) 1 Page - Fairchild Semiconductor |
1 / 10 page tm August 2009 ©2009 Fairchild Semiconductor Corporation FCP11N60N / FCPF11N60NT Rev. A www.fairchildsemi.com 1 SupreMOS TM FCP11N60N / FCPF11N60NT N-Channel MOSFET 600V, 10.8A, 0.299 Ω Features •RDS(on) = 0.255Ω ( Typ.)@ VGS = 10V, ID = 5.4A • Ultra Low Gate Charge ( Typ. Qg = 27.4nC) • Low Effective Output Capacitance • 100% Avalanche Tested • RoHS Compliant Description The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based technologies. By utilizing this advanced technology and precise process control, SupreMOS provides world class Rsp, superior switching performance and ruggedness. This SupreMOS MOSFET fits the industry’s AC-DC SMPS requirements for PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications. D G S TO-220F FCPF Series G S D G D S TO-220 FCP Series MOSFET Maximum Ratings T C = 25 oC unless otherwise noted* Thermal Characteristics Symbol Parameter FCP11N60N FCPF11N60NT Units VDSS Drain to Source Voltage 600 V VGSS Gate to Source Voltage ±30 V ID Drain Current -Continuous (TC = 25oC) 10.8 10.8* A -Continuous (TC = 100oC) 6.8 6.8* IDM Drain Current - Pulsed (Note 1) 32.4 32.4* A EAS Single Pulsed Avalanche Energy (Note 2) 201.7 mJ IAR Avalanche Current 3.7 A EAR Repetitive Avalanche Energy 0.94 mJ dv/dt MOSFET dv/dt Ruggedness 100 V/ns Peak Diode Recovery dv/dt (Note 3) 20 V/ns PD Power Dissipation (TC = 25oC) 94.0 32.1 W - Derate above 25oC0.75 0.26 W/oC TJ, TSTG Operating and Storage Temperature Range -55 to +150 oC TL Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds 300 oC Symbol Parameter FCP11N60N FCPF11N60NT Units RθJC Thermal Resistance, Junction to Case 1.33 3.9 oC/W RθCS Thermal Resistance, Case to Heat Sink (Typical) 0.5 0.5 RθJA Thermal Resistance, Junction to Ambient 62.5 62.5 *Drain current limited by maximum junction temperature |
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