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Motorola Bipolar Power Transistor Device Data

SWITCHMODE

NPN Silicon Power Transistors

The BUX85 is designed for high voltage, high speed power switching applications

like converters, inverters, switching regulators, motor control systems.

SPECIFICATIONS FEATURES:

• VCEO(sus) 450 V

• VCES(sus) 1000 V

• Fall time = 0.3 µs (typ) at IC = 1.0 A

• VCE(sat) = 1.0 V (max) at IC = 1.0 A, IB = 0.2 A

MAXIMUM RATINGS

Rating

Symbol

BUX84

BUX85

Unit

Collector–Emitter Voltage

VCEO(sus)

400

450

Vdc

Collector–Emitter Voltage

VCES

800

1000

Vdc

Emitter Base Voltage

VEBO

5

Vdc

Collector Current

— Continuous

— Peak (1)

IC

ICM

2

3.0

Adc

Base Current

— Continuous

— Peak (1)

IB

IBM

0.75

1.0

Adc

Reverse Base Current — Peak

IBM

1

Adc

Total Power Dissipation @ TC = 25_C

Derate above 25

_C

PD

50

400

Watts

mW/

_C

Operating and Storage Junction Temperature Range

TJ, Tstg

– 65 to + 150

_C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

R

θJC

2.5

_C/W

Thermal Resistance, Junction to Ambient

R

θJA

62.5

_C/W

Maximum Lead Temperature for Soldering Purpose:

1/8

″ from Case for 5 Seconds

TL

275

_C

(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle

x10%.

SWITCHMODE is a trademark of Motorola, Inc.

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document

by BUX85/D

BUX85

2 AMPERES

POWER TRANSISTOR

NPN SILICON

450 VOLTS

50 WATTS

CASE 221A–06

TO–220AB

REV 7