UF28100H datasheet(1/3 Pages) MA-COM

Part #	UF28100H

Description	RF Power MOSFET Transistor 100W, 100-500 MHz, 28V

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Manufacturer	MA-COM [M/A-COM Technology Solutions, Inc.]

Direct Link	http://www.macomtech.com

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RF Power MOSFET Transistor

100W, 100-500 MHz, 28V

M/A-COM Products

Released - Ver 08.07

UF28100H

• North America Tel: 800.366.2266 / Fax: 978.366.2266

• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300

• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298

Visit www.macomtech.com for additional data sheets and product information.

M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make

changes to the product(s) or information contained herein without notice.

ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions

is considering for development. Performance is based on target specifications, simulated results,

and/or prototype measurements. Commitment to develop is not guaranteed.

PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology

Solutions has under development. Performance is based on engineering tests. Specifications are

typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.

Commitment to produce in volume is not guaranteed.

Features

• N-channel enhancement mode device

• DMOS structure

• Lower capacitances for broadband operation

• High saturated output power

• Lower noise figure than competitive devices

• RoHS Compliant

ABSOLUTE MAXIMUM RATINGS AT 25° C

Parameter

Rating

Drain-Source Voltage

65

Gate-Source Voltage

20

Drain-Source Current

12*

Power Dissipation

250

Junction Temperature

200

Storage Temperature

-55 to +150

Thermal Resistance

0.7

Symbol

VDS

VGS

IDS

PD

TJ

TSTG

θJC

Units

V

A

W

°C

°C/W

ELECTRICAL CHARACTERISTICS AT 25°C

Parameter

Symbol

Min

Max

Units

Test Conditions

Drain-Source Breakdown Voltage

BVDSS

65

-

V

VGS = 0.0 V , IDS = 15.0 mA

Drain-Source Leakage Current

IDSS

-

3.0

mA

VGS = 28.0 V , VGS = 0.0 V

Gate-Source Leakage Current

IGSS

-

3.0

µA

VGS = 20.0 V , VDS = 0.0 V

Gate Threshold Voltage

VGS(TH)

2.0

6.0

V

VDS = 10.0 V , IDS = 300.0 mA

Forward Transconductance

GM

1.5

-

S

VDS = 10.0 V , IDS 3000.0 mA , Δ VGS = 1.0V, 80 μs Pulse

Input Capacitance

CISS

-

135

pF

VDS = 28.0 V , F = 1.0 MHz

Output Capacitance

COSS

-

90

pF

VDS = 28.0 V , F = 1.0 MHz

Reverse Capacitance

CRSS

-

24

pF

VDS = 28.0 V , F = 1.0 MHz

Power Gain

GP

10

-

dB

VDD = 28.0 V, IDQ = 600.0 mA, POUT = 100.0 W F =500 MHz

Drain Efficiency

ŋD

50

-

%

VDD = 28.0 V, IDQ = 600.0 mA, POUT = 100.0 W F =500 MHz

Load Mismatch Tolerance

VSWR-T

-

30:1

-

VDD = 28.0 V, IDQ = 600.0 mA, POUT = 100.0 W F =500 MHz

Return Loss

RL

10

-

dB

VDD = 28.0 V, IDQ = 600.0 mA, POUT = 100.0 W F =500 MHz

F (MHz)

ZIN (Ω)

ZLOAD (Ω)

100

4.5-j6.0

14.5+j0.5

300

2.25-j1.75

7.5j1.0

500

1.5+j5.5

3.5+j3.5

VDD=28V, IDQ=600 Ma, POUT =100.0 W

TYPICAL DEVICE IMPEDANCES

ZIN is the series equivalent input impedance of the device from gate to gate.

ZLOAD is the optimum series equivalent load impedance as measured from drain

*Per side

PACKAGE OUTLINE

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