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ADT7310TRZ-REEL Datasheet(PDF) 5 Page - Analog Devices |
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ADT7310TRZ-REEL Datasheet(HTML) 5 Page - Analog Devices |
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5 / 24 page  ADT7310 Rev. 0 | Page 5 of 24 ABSOLUTE MAXIMUM RATINGS Table 3. Parameter Rating VDD to GND –0.3 V to +7 V DIN Input Voltage to GND –0.3 V to VDD + 0.3 V DOUT Voltage to GND –0.3 V to VDD + 0.3 V SCLK Input Voltage to GND –0.3 V to VDD + 0.3 V CS Input Voltage to GND –0.3 V to VDD + 0.3 V CT and INT Output Voltage to GND –0.3 V to VDD + 0.3 V ESD Rating (Human Body Model) 2.0 kV Operating Temperature Range –55°C to +150°C Storage Temperature Range –65°C to +160°C Maximum Junction Temperature, TJMAX 150°C 8-Lead SOIC-N (R-8) Power Dissipation1 WMAX = (TJMAX − TA2)/θJA Thermal Impedance3 θJA, Junction-to-Ambient (Still Air) 121°C/W θJC, Junction-to-Case 56°C/W IR Reflow Soldering 220°C Peak Temperature (RoHS- Compliant Package) 260°C (0°C) Time at Peak Temperature 20 sec to 40 sec Ramp-Up Rate 3°C/sec maximum Ramp-Down Rate –6°C/sec maximum Time from 25°C to Peak Temperature 8 minutes maximum 1 Values relate to package being used on a standard 2-layer PCB. This gives a worst-case θJA and θJC. See Figure 4 for a plot of maximum power dissipation vs. ambient temperature (TA). 2 TA = ambient temperature. 3 Junction-to-case resistance is applicable to components featuring a preferential flow direction, for example, components mounted on a heat sink. Junction-to-ambient is more useful for air-cooled, PCB-mounted components. Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TEMPERATURE (°C) 1.2 0.8 1.0 0.6 0.2 0.4 0 MAX PD = 3.4mW AT 150°C Figure 4. SOIC_N Maximum Power Dissipation vs. Temperature ESD CAUTION |
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