DU1260T datasheet(1/3 Pages) MA-COM

Part #	DU1260T

Description	RF Power MOSFET Transistor 60W, 2-175MHz, 12V

Download	3 Pages

Scroll/Zoom	100%

Manufacturer	MA-COM [M/A-COM Technology Solutions, Inc.]

Direct Link	http://www.macomtech.com

Logo

1 / 3 page

1

RF Power MOSFET Transistor

60W, 2-175MHz, 12V

M/A-COM Products

Released; RoHS Compliant

DU1260T

• North America Tel: 800.366.2266 / Fax: 978.366.2266

• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300

• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298

Visit www.macomtech.com for additional data sheets and product information.

M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make

changes to the product(s) or information contained herein without notice.

ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions

is considering for development. Performance is based on target specifications, simulated results,

and/or prototype measurements. Commitment to develop is not guaranteed.

PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology

Solutions has under development. Performance is based on engineering tests. Specifications are

typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.

Commitment to produce in volume is not guaranteed.

Features

• N-Channel enhancement mode device

• DMOS structure

• Lower capacitances for broadband operation

• High saturated output power

• Lower noise figure than bipolar devices

• Specifically designed for 12 volt applications

Package Outline

ABSOLUTE MAXIMUM RATINGS AT 25° C

Parameter

Rating

Drain-Source Voltage

40

Gate-Source Voltage

20

Drain-Source Current

24

Power Dissipation

250

Junction Temperature

200

Storage Temperature

-55 to +150

Thermal Resistance

0.7

Symbol

VDS

VGS

IDS

PD

TJ

TSTG

θJC

Units

V

A

W

°C

°C/W

MILLIMETERS

INCHES

MIN

MAX

MIN

MAX

A

24.38

25.15

.960

.990

B

18.29

18.54

.720

.730

C

21.36

21.74

.841

.856

D

12.60

12.85

.496

.506

E

5.33

5.59

.210

.220

F

5.08

5.33

.200

.210

G

3.81

4.06

.150

.160

H

3.10

3.15

.122

.128

J

2.51

2.67

.099

.105

K

4.06

4.57

.160

.180

L

6.68

7.49

.263

.295

LETTER

DIM

M

.10

.15

.004

.006

ELECTRICAL CHARACTERISTICS AT 25°C

Parameter

Symbol

Min

Max

Units

Test Conditions

Drain-Source Breakdown Voltage

BVDSS

40

-

V

VGS = 0.0 V , IDS = 30.0 mA

Drain-Source Leakage Current

IDSS

-

6.0

mA

VGS = 15.0 V , VGS = 0.0 V

Gate-Source Leakage Current

IGSS

-

6.0

µA

VGS = 20.0 V , VDS = 0.0 V

Gate Threshold Voltage

VGS(TH)

2.0

6.0

V

VDS = 10.0 V , IDS = 600 mA

Forward Transconductance

GM

3.0

-

S

VDS = 10.0 V , IDS = 6000 mA , Δ VGS = 1.0 V

Input Capacitance

CISS

-

200

pF

VDS = 12.0 V , F = 1.0 MHz

Output Capacitance

COSS

-

240

pF

VDS = 12.0 V , F = 1.0 MHz

Reverse Capacitance

CRSS

-

48

pF

VDS = 12.0 V , F = 1.0 MHz

Drain Efficiency

ŋD

60

-

%

VDD = 12.0 V, IDQ = 600 mA, POUT = 60 W F =175 MHz

Load Mismatch

VSWR-T

-

30:1

-

VDD = 12.0 V, IDQ = 600 mA, POUT = 60 W F =175 MHz

Power Gain

GP

8.0

-

dB

VDD = 12.0 V, IDQ = 600 mA, POUT = 60 W F =175 MHz

F (MHz)

ZIN (Ω)

ZLOAD (Ω)

30

4.5 - j8.0

4.6 - j3.0

100

1.4 - j4.0

1.4 - j8.0

175

1.0 - j0.5

VDD = 12V, IDQ = 600mA, POUT = 60W

TYPICAL DEVICE IMPEDANCE

ZIN is the series equivalent input impedance of the device

from gate to source.

ZLOAD is the optimum series equivalent load impedance as

measured from drain to ground.

Similar Part No. - DU1260T

Manufacturer	Part #	Datasheet	Description
Tyco Electronics	DU1260T	197Kb / 3P	RF MOSFET Power Transistor, 6OW, 12V 2 - 175 MHz

More results

Similar Description - DU1260T

Manufacturer	Part #	Datasheet	Description
M/A-COM Technology Solu...	DU2860U	149Kb / 3P	RF Power MOSFET Transistor 60W, 2-175MHz, 28V
	DU2860T	161Kb / 3P	RF Power MOSFET Transistor 60W, 2-175MHz, 28V
	DU1215S	166Kb / 3P	RF Power MOSFET Transistor 15W, 2-175MHz, 12V
	DU1230S	160Kb / 3P	RF Power MOSFET Transistor 30W, 2-175MHz, 12V
	DU2840S	164Kb / 3P	RF Power MOSFET Transistor 40W, 2-175MHz, 28V
	DU2805S	165Kb / 3P	RF Power MOSFET Transistor 5W, 2-175MHz, 28V
	DU2810S	151Kb / 2P	RF Power MOSFET Transistor 10W, 2-175MHz, 28V
	DU28200M	156Kb / 3P	RF Power MOSFET Transistor 200W, 2-175MHz, 28V
	DU2820S	164Kb / 3P	RF Power MOSFET Transistor 200W, 2-175MHz, 28V
	DU2880U	156Kb / 3P	RF Power MOSFET Transistor 80W, 2-175MHz, 28V

More results

DU1260T Datasheet(PDF) 1 Page - M/A-COM Technology Solutions, Inc.

DU1260T Datasheet(HTML) 1 Page - M/A-COM Technology Solutions, Inc.

Similar Part No. - DU1260T

Similar Description - DU1260T

Html Pages

1 2 3

Datasheet Download

Link URL