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DU1260T Datasheet(PDF) 1 Page - M/A-COM Technology Solutions, Inc. |
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DU1260T Datasheet(HTML) 1 Page - M/A-COM Technology Solutions, Inc. |
1 / 3 page 1 RF Power MOSFET Transistor 60W, 2-175MHz, 12V M/A-COM Products Released; RoHS Compliant DU1260T • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. Features • N-Channel enhancement mode device • DMOS structure • Lower capacitances for broadband operation • High saturated output power • Lower noise figure than bipolar devices • Specifically designed for 12 volt applications Package Outline ABSOLUTE MAXIMUM RATINGS AT 25° C Parameter Rating Drain-Source Voltage 40 Gate-Source Voltage 20 Drain-Source Current 24 Power Dissipation 250 Junction Temperature 200 Storage Temperature -55 to +150 Thermal Resistance 0.7 Symbol VDS VGS IDS PD TJ TSTG θJC Units V V A W °C °C °C/W MILLIMETERS INCHES MIN MAX MIN MAX A 24.38 25.15 .960 .990 B 18.29 18.54 .720 .730 C 21.36 21.74 .841 .856 D 12.60 12.85 .496 .506 E 5.33 5.59 .210 .220 F 5.08 5.33 .200 .210 G 3.81 4.06 .150 .160 H 3.10 3.15 .122 .128 J 2.51 2.67 .099 .105 K 4.06 4.57 .160 .180 L 6.68 7.49 .263 .295 LETTER DIM M .10 .15 .004 .006 ELECTRICAL CHARACTERISTICS AT 25°C Parameter Symbol Min Max Units Test Conditions Drain-Source Breakdown Voltage BVDSS 40 - V VGS = 0.0 V , IDS = 30.0 mA Drain-Source Leakage Current IDSS - 6.0 mA VGS = 15.0 V , VGS = 0.0 V Gate-Source Leakage Current IGSS - 6.0 µA VGS = 20.0 V , VDS = 0.0 V Gate Threshold Voltage VGS(TH) 2.0 6.0 V VDS = 10.0 V , IDS = 600 mA Forward Transconductance GM 3.0 - S VDS = 10.0 V , IDS = 6000 mA , Δ VGS = 1.0 V Input Capacitance CISS - 200 pF VDS = 12.0 V , F = 1.0 MHz Output Capacitance COSS - 240 pF VDS = 12.0 V , F = 1.0 MHz Reverse Capacitance CRSS - 48 pF VDS = 12.0 V , F = 1.0 MHz Drain Efficiency ŋD 60 - % VDD = 12.0 V, IDQ = 600 mA, POUT = 60 W F =175 MHz Load Mismatch VSWR-T - 30:1 - VDD = 12.0 V, IDQ = 600 mA, POUT = 60 W F =175 MHz Power Gain GP 8.0 - dB VDD = 12.0 V, IDQ = 600 mA, POUT = 60 W F =175 MHz F (MHz) ZIN (Ω) ZLOAD (Ω) 30 4.5 - j8.0 4.6 - j3.0 100 1.4 - j4.0 1.4 - j8.0 175 1.0 - j0.5 1.0 - j0.5 VDD = 12V, IDQ = 600mA, POUT = 60W TYPICAL DEVICE IMPEDANCE ZIN is the series equivalent input impedance of the device from gate to source. ZLOAD is the optimum series equivalent load impedance as measured from drain to ground. |
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