1

Motorola Bipolar Power Transistor Device Data

SWITCHMODE Series

NPN Silicon Power Transistor

. . . designed for high current, high speed, high power applications.

• High DC current gain: HFE min. = 20 at IC = 10 A

• Low VCE(sat): VCE(sat) max. = 1.0 V at IC = 10 A

• Very fast switching times:

TF max. = 0.35 µs at IC = 20 A

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector–Emitter Voltage

VCEO(sus)

250

Vdc

Collector–Base Voltage

VCBO

300

Vdc

Emitter–Base Voltage

VEBO

7

Vdc

Collector–Emitter Voltage (VBE = –1.5 V)

VCEX

300

Vdc

Collector–Emitter Voltage (RBE = 100 Ω)

VCER

290

Vdc

Collector–Current — Continuous

— Peak (pw

v 10 ms)

IC

ICM

40

50

Adc

Apk

Base–Current continuous

IB

8

Adc

Total Power Dissipation @ TC = 25_C

PD

250

Watts

Operating and Storage Junction Temperature Range

TJ, Tstg

– 65 to 200

_C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

θJC

0.7

_C/W

Figure 1. Power Derating

1.0

0

TC, TEMPERATURE (°C)

40

80

160

200

0.4

0.8

0.6

0.2

120

SWITCHMODE is a trademark of Motorola, Inc.

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document

by BUV22/D

BUV22

40 AMPERES

NPN SILICON

POWER

METAL TRANSISTOR

250 VOLTS

250 WATTS

CASE 197A–05

TO–204AE

(TO–3)

REV 7