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SMX55161A-75HKCI Datasheet(PDF) 3 Page - Austin Semiconductor

Part # SMX55161A-75HKCI
Description  262144 x 16 BIT VRAM MULTIPORT VIDEO RAM
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Manufacturer  AUSTIN [Austin Semiconductor]
Direct Link  http://www.austinsemiconductor.com
Logo AUSTIN - Austin Semiconductor

SMX55161A-75HKCI Datasheet(HTML) 3 Page - Austin Semiconductor

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VRAM
SM55161A
Production
Austin Semiconductor, Inc.
AustinSemiconductor,Inc.reservestherighttochangeproductsorspecificationswithoutnotice.
3
SMJ55161A
Rev. 1.6
03/05
GENERAL DESCRIPTION
The SMJ55161A, a multiport-video random-access memory
(RAM), is a high-speed, dual-port memory device. It consists
of a dynamic RAM (DRAM) module organized as 262 144 words
of 16 bits each interfaced to a serial-data register (serial-access
memory [SAM]) organized as 512 words of 16 bits each. The
SMJ55161A supports three basic types of operation: random
access to and from the DRAM, serial access to/from the serial
register, and transfer of data from any row in the DRAM to the
serial register and vice versa. Except during transfer operations,
the SMJ55161A can be accessed simultaneously and
asynchronously from the DRAM and SAM ports.
The SMJ55161A is equipped with several features designed
to provide higher system-level bandwidth and to simplify design
integration on both the DRAM and SAM ports. On the DRAM
port, greater pixel-draw rates are achieved by the device’s
(8 × 8) × 2 block-write feature. The block-write mode allows 16
bits of data (present in an on-chip color-data register) to be
written to any combination of eight adjacent column-address
locations. As many as 128 bits of data can be written to memory
during each CAS\ cycle time. Also, on the DRAM port and
SAM port, a write mask or a write-per-bit feature allows
masking of any combination of the 16 inputs/outputs on any
write cycle. The persistent write-per-bit feature uses a mask
register that, once loaded, can be used on subsequent write
cycles without reloading. The SMJ55161A also offers byte
control which can be applied in read cycles, write cycles, block-
write cycles, load-write-mask-register cycles, and load-color-
register cycles. The SMJ55161A also offers extended-data-
output (EDO) mode. The EDO mode is effective in both the
page-mode and standard DRAM cycles.
The SMJ55161A offers a split-register-transfer read
(DRAM-to-SAM) feature for the serial register (SAM port) that
enables real-time-register-load implementation for continuous
serial-data streams without critical timing requirements. The
register is divided into a high half and a low half. While one half
is being read out of the SAM port, the other half can be loaded
from the memory array. For applications not requiring real-time
register load (for example, loads done during CRT-retrace
periods), the full-register mode of operation is retained to
simplify system design.
The SAM port is designed for maximum performance. Data
can be accessed from the SAM at serial rates up to 50 MHz.
During the split-register-transfer read operations, internal
circuitry detects when the last bit position is accessed from the
active half of the register and immediately transfers control to
the opposite half. A separate output, QSF, is included to
indicate which half of the serial register is active.
All inputs, outputs, and clock signals on the SMJ55161 are
compatible with Series 54/74 TTL. All address lines and data-in
lines are latched on-chip to simplify system design. All data-
out lines are unlatched to allow greater system flexibility.
The SMJ55161A is offered in a 68-pin ceramic pin-grid-
array package (GB suffix) and a 64-pin ceramic flatpack (HKC
suffix).
The SMJ55161A is supported by a broad line of graphic
processors and control devices from Texas Instruments. See
Table 2 and Table 4 for additional information.
Additional features of the 55161A include MASKED
FLASH WRITE which allows for data in color register to be
written into all the memory locations of a selected row.


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