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SM55161A Datasheet(PDF) 54 Page - Austin Semiconductor |
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SM55161A Datasheet(HTML) 54 Page - Austin Semiconductor |
54 / 64 page VRAM SM55161A Production Austin Semiconductor, Inc. AustinSemiconductor,Inc.reservestherighttochangeproductsorspecificationswithoutnotice. 54 SMJ55161A Rev. 1.6 03/05 FIGURE 44: FULL-REGISTER TRANSFER READ-TIMING, REAL-TIME LOAD OPERATION/LATE-LOAD OPERATION NOTES: A. DQ outputs remain in the high-impedance state for the entire memory-to-data-register transfer cycle. The memory-to-data-register transfer cycle is used to load the data registers in parallel from the memory array. The 512 locations in each data register are written to from the 512 corresponding columns of the selected row. B. Once data is transferred into the data registers, the SAM is in the serial-read mode, that is, the SQ is enabled, allowing data to be shifted out of the registers. Also, the first bit to read from the data register after TRG\ has gone high must be activated by a positive transition of SC. C. A0–A8. D. Late load operation is defined as t d(THRH) < 0 ns. |
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